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91篇 您的检索式：作者名="Steckle"

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	题名	作者	年代	出处	被引量
1	显示文摘	Steckl A J Devrajan J	1996	Appl Phys Letts1996，69，：	1
2	Segmented organosiloxane copolymers 1 Synthesis of siloxane-urea copolymers 显示文摘	Yilgor I Shaaban A K Steckle W P	1984	Polymer1984，25，：	1
3	Segmented polysiloxane-polyamide copolymers显示文摘	Yilgor I Lee B Steckle J W P	1983	Polymer Preprint1983，24，2：	1
4	High-voltage Ni- and Pt-SiC Schottky diodesutilizing metal field plate termination显示文摘	Saxena V Su J N Steckl A J	1999	IEEE Electron Devices1999，46，3：	1
5	Segmented organosiloxane copolymers (1) Synthesis of siloxane-urea copolymers显示文摘	Yilgor I Shaaban A K Steckle W P	1984	Polymer1984，25，：	1
6	Sold State Studies of High Internal Phase Emulsion Polystyrene Foams Crosslinked With Trivinylbenzene and Deuterated Divinylbenzene显示文摘	Steckle W P Langlois D A Small J H	2001	Polymer Preprints2001，42，1：	1
7	Complementary electrowetting devices on plasma-treated fluoropolymer surfaces显示文摘	Kim D Y Steckl A J	2010	Langmuir2010，26，12：	1
8	High-voltage Ni-and pt-SiC Schottky diodes utilizing metal field plate termination显示文摘	Su J N Steckl A J	1999	IEEE Electron Devices1999，46，3：	1
9	Segmented polysiloxane-polyamide copolymers显示文摘	Yilgor I Lee B Steckle W P	1983	Polym Prep1983，24，2：	1
10	Three-color electrowetting display device for electronic paper显示文摘	You H Steckl A J	2010	Appl Phys Lett2010，97，02：	1
11	High-voltage Ni--and pt-SiC Schottky diodes utilizing metal field plate termination 显示文摘	Saxena V Su J N Steckl A J	1999	IEEE Electron Devices1999，46，3：	1
12	Photocatalytic shelf cleaning textile fibers by coaxial electrospinning显示文摘	Bedford N M Steckl A J	2010	ACS Applied Materials & h~terfaces2010，2，8：	1
13	Ultrashallow Si P+-N Junction Fabrication by Low Energy Ga+ Focused Ion Beam Implantation显示文摘	Steckl A J Moguland H C Mogren S M	1990	J Vac Sci Techno l1990，8，6：	1
14	Structal characterazation of nanometer SiC films grown on Si显示文摘	Li J P Steckl A J	1993	Applied Physcs Letters1993，62，24：	1
15	Electroluminescence from single monolayers of nanocrystals in molecular organic devices显示文摘	COE S WOO W K STECKLE J S	2002	Nature2002，420，：	1
16	Electrical Properties of Nanometer-Scale Si P+-N Junctions Fabricated by Low Energy Ga+ Focused Ion Beam Implantation显示文摘	Steckl A J Mogul H C Mogren S M	1991	J Vac Sci Technol1991，9，5：	1
17	High-voltage Ni-and pt-SiC Schottky diodes utilizing metal field plate termination显示文摘	Saxena V Su J N Steckl A J	1999	IEEE Electron Devices1999，46，3：	1
18	Visible Emission from Er-Doped GaN Grown by Solid Source Molecular Beam Epitaxy 显示文摘	Steckl A J Birkhabn R	1998	Applied Physics Letters1998，73，12：	1
19	Reactive ion etching of SiC thin film by mixtures of fluorinated gases and oxygen 显示文摘	Pan W S Steckl A J	1990	J Electrochem Soc1990，137，1：	1
20	Reactive difunctional siloxane oligomers,Synthesis and characterization显示文摘	Yilgor I Riffle J S Steckle W P	1984	Polymeric Materials Science and Engineering Proceedings of the ACS Division of Polymeric Material1984，50，：	1

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