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3篇 您的检索式:作者名="Simon P.Ringer"
    题名 作者 年代 出处 被引量
1Effect of Small Addition of Sc on the Microstructural Evolution in Al-15Ag Alloy显示文摘The effect of small addition of Sc on the microstructural evolution in AI-15Ag alloy was investigated by Monte Carlosimulation and transmission electron microscopy (TEM). Monte Carlo simulation results indicate that Ag clusteringis suppressed by the addition of Sc during the initial ageing stage, and there is a little chemical repulsion between Agatoms and Sc atoms. TEM observations show that the morphology of γ’ precipitation can be modified by the smalladdition of Sc, which does result in a refinement of γ’ precipitates in AI-15Ag-0.2Sc. The mechanism by which traceSc affect the microstructure is to reduce the ledge density of γ’ precipitates.Zhiguo CHEN Ziqiao ZHENG Simon P.Ringer 2005Journal of Materials Science & Technology2005,21,5:1
2微量钪对Al-15Ag合金时效特性与微观组织的影响显示文摘通过时效硬化曲线测量及时效组织分析,研究了微量钪对Al-15Ag合金时效行为和显微组织的影响。在Al-15Ag合金中添加0.2%Sc(质量分数,下同),可以增强合金在190℃和350℃时效的时效硬化效果,延长峰时效的到达时间。微量钪的添加促使合金中γ′相细小密集地析出,同时钪的存在减少了γ′相宽面上的位错台阶数。含钪Al-15Ag合金中γ′相长大过程比较缓慢的微观机理是微量钪的添加影响了合金中γ′相宽面上的台阶分布。陈志国 郑子樵 Simon P.Ringer 2004稀有金属材料与工程2004,33,9:0
3Electrode-induced impurities in tin halide perovskite solar cell material CsSnBr_(3) from first principles显示文摘All-inorganic lead-free CsSnBr_(3)is attractive for applications in solar cells due to its nontoxicity and stability,but the device performance to date has been poor.Besides the intrinsic properties,impurities induced from electrodes may significantly influence the device performance.Here,we systematically studied the stability,transition energy levels,and diffusion of impurities from the most commonly used electrodes(Au,Ag,Cu,graphite,and graphene)in CsSnBr_(3)based on density functional theory calculations.Our results reveal that,whereas graphite and graphene electrodes exhibit negligible influence on CsSnBr_(3)due to the relatively high formation energies for carbon impurities in CsSnBr_(3),atoms from the metal electrodes can effectively diffuse into CsSnBr_(3)along interstice and form electrically active impurities in CsSnBr_(3).In this case,a significant amount of donor interstitial impurities,such as Agti,Cuti,and Auti,will be formed under p-type conditions,whereas the Sn-site substitutional acceptor impurities,namely Au_(Sn)^(2-),Ag_(Sn)^(2-),and Cu_(Sn)^(2-),are the dominant impurities,especially under n-type conditions.In particular,except for Auti,all these major impurities from the metal electrodes act as nonradiative recombination centers in CsSnBr_(3)and significantly degrade the device performance.Our work highlights the distinct behaviors of the electrode impurities in CsSnBr_(3)and their influence on the related devices and provides valuable information for identifying suitable electrodes for optoelectronic applications.Yuhang Liang Xiangyuan Cui Feng Li Catherine Stampfl Simon P.Ringer Rongkun Zheng 2021npj Computational Materials2021,,1:0
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