| 1 | Reliability evaluation on sense-switch p-channel flash显示文摘In this paper,the reliability of sense-switch p-channel flash is evaluated extensively.The endurance result indicates that the p-channel flash could be programmed and erased for more than 10000 cycles;the room temperature read stress shows negligible influence on the p-channel flash cell;high temperature data retention at 150℃ is extrapolated to be about 5 years and 53 years corresponding to 30% and 40% degradation in the drive current,respectively.Moreover,the electrical parameters of the p-channel flash at different operation temperature are found to be less affected.All the results above indicate that the sense-switch p-channel flash is suitable to be used as the configuration cell in flash-based FPGA. | Side Song Guozhu Liu Hailiang Zhang Lichao Chao Jinghe Wei Wei Zhao Genshen Hong Qi He | 2021 | Journal of Semiconductors2021，42，8： | 2 |
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