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您的检索式：作者名="Shao Beiling"
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| 1 | MICROSTRUCTURE OF INTERFACE BETWEEN HVOF SPRAYED WC-Co COATING AND SPRING STEEL SUBSTRATE显示文摘MICROSTRUCTUREOFINTERFACEBETWEENHVOFSPRAYEDWC-CoCOATINGANDSPRINGSTEELSUBSTRATE￥ShaoBeiling;LiuAnsheng;WangXiaohua;LiYonghong;... | Shao Beiling Liu Ansheng Wang Xiaohua Li Yonghong Zou Linying Wang Jing Zhang Jianguo Shi Changyong Zhou Yiru(General Research institute For Nonferrous Metals,Beijing 100088) | 1996 | 中国有色金属学会会刊:英文版1996，6，4： | 3 |
| 2 | TEM study on Si_(0.65) Ge_(0.35) /p Si HIP infrared detector显示文摘Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins. | Liu Ansheng(刘安生), Shao Beiling(邵贝羚), Liu Zheng(刘 峥), Wang Jing(王 敬) General Research Institute for Nonferrous Metals, Beijing 100088, P.R.China | 1999 | 中国有色金属学会会刊:英文版1999，9，3： | 1 |
| 3 | TEM STUDY ON LOCALIZED RECRYSTALLIZATION SOI显示文摘TEMSTUDYONLOCALIZEDRECRYSTALLIZATIONSOI①LiuAnsheng,ShaoBeiling,LiYonghong,LiuZhengGeneralResearchInstituteforNonferrousMetal... | Liu, Ansheng Shao, Beiling Li, Yonghong Liu, Zheng Zhang, Pengfei Tsien, Peixin | 1997 | 中国有色金属学会会刊:英文版1997，7，1： | 0 |
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