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15篇 您的检索式:作者名="Sahn NAHM"
    题名 作者 年代 出处 被引量
1Superhydrophobic and antireflective nanograss-coated glass for high performance solar cells显示文摘我们在场为生产 superhydrophobic 的一个灵巧的方法 nanograss 涂(SNGC ) 在空气 / 眼镜拥有两个都减少的反射率和自我清洗的性质的玻璃表面连接。CaF 的折射索引 < 潜水艇 class= “ a-plus-plus ” > 玻璃底层上的 2 nanograss (NG ) 层,由看一眼的角度蒸汽免职扔了,在 500 nm 是 1.04,它是到目前为止曾经报导的秒低的价值。氟化的 NG 层产生一个高水位线接触角度(> 150 ?????Hyo Jin Gwon Yensil Park Cheon Woo Moon Sahn Nahm Seok-Jin Yoon Soo Young Kim Ho Won Jang 2014Nano Research2014,7,5:3
2Ceramic-metal package for high power LED lighting显示文摘灯光的轻射出的二极管(LEDs ) 在最近的年里在街光系统的地里画了大兴趣的高力量。分别地,为在商业市场的带的街光的成功的发射的关键参数是价格和轻效率,他们被材料极大地影响,尽最大努力使用的设计因素带了包裹。这篇文章介绍一个新图案和材料处理技术认识到包装带与的解决方案在价格和性能有益。合算的材料和处理技术能经由厚电影被认识到眼镜陶器的绝缘层和银售票员。用到在带的包裹的热水池的直接的热驱散的高度有效的热设计被表明。Yu Jin HEO Hyo Tae KIM Sahn NAHM Jihoon KIM Young Joon YOON Jonghee KIM 2012Frontiers of Optoelectronics2012,5,2:2
3Low temperature sintering and microwave dielectric properties of zinc metatitanate-rutile mixtures using boron显示文摘HYO Tae Kim SEONG Ho Kim SAHN Nahm etal 1999J Am Ce - ram SOc1999,82,11:1
4Lowtemperature sintering and microwave dielectric properties of zinc metatitanate--rutile mixtures using boron 显示文摘HYO Tae Kim SEONG Ho Kim SAHN Nahm 1999J Am Ceram Soc1999,82,11:1
5A study on the friction and thrust force of the shaft and mobile element in the impact typed piezoelectric ultrasonic linear motor显示文摘Kyong-Jae Lee Hyun-Phill Ko Chong-Yun Kang Hyun-Jai Kim Seok-Jin Yoon Sahn Nahm 2006Journal of Electroceramics (-)2006,,2:1
6Low-fired (Zn,Mg)TiO3 microwave dielectrics显示文摘KIM Hyo Tae NAHM Sahn BYUN Jae Dong 1999J Am Ceram Soc1999,82,12:1
7Structural variation and microwave dielectric properties of TiO~-doped Ba(Zntt3Ta2/3)O3 ceramics 显示文摘KIM Min-han SAHN Nahm LEE Woosung 2004J Eur Ceram Soc2004,24,13:1
8Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Znz SiO4 ceramics显示文摘Ngoc-Huan Nguyen Jong-Bong Lim Sahn Nahm 2007J Am Ceram Soe2007,90,10:1
9Effects of Cr doping on structural and electrochemical properties of Li_(4)Ti_(5)O_(12) nanostructure for sodium-ion battery anode显示文摘Sodium-ion batteries are considered as promising alternatives to lithium-ion batteries,owing to their low cost and abundant raw materials.Among the several candidate materials for the anode,spinel-type Li_(4)Ti_(5)O_(12)has potential owing to its superior safety originating from an appropriate operating voltage and the reversible Na^(+)intercalation properties.However,a low diffusion coefficient for Na^(+)and the insulating nature of LTO remains challenging for practical sodium-ion battery systems.Herein,we present a strategy for integrating physical and chemical approaches to achieve superior electrochemical properties in LTO.We demonstrate that carefully controlling the amount of Cr doping is crucial to enhance the electrochemical properties of nanostructured LTO.Optimized Cr doped LTO shows a superior reversible capacity of 110 m Ah g^(-1) after 400 cycles at 1 C,with a three-fold higher capacity(75 m Ah g^(-1))at 10 C compared with undoped LTO material.This suggests that appropriately Cr doped nanostructured LTO is a promising anode material for sodium-ion batteries.Sang Hyuk Gong Ji Hyeon Lee Dong Won Chun Jee-Hwan Bae Sung-Chul Kim Seungho Yu Sahn Nahm Hyung-Seok Kim 2021Journal of Energy Chemistry2021,30,8:1
10Luminescence properties of Eu 2+ activated Ba 2 Si 5 N 8 red phosphors with various Eu 2+ contents显示文摘Jun-Myung Song Joo-Seok Park Sahn Nahm 2012Ceramics International2012,,:1
11显示文摘Kim H T Sahn Nahm Byun J D 1999Journal of the American Ceramic Society1999,82,12:1
12Effect of Ga2O3 on microstructure and microwave dielectric properties of Ba ( Zn1/3 T2/3 ) O3 ceramics 显示文摘Yang Jung In Sahn Nahm Choi Chang Hack 2002Jpn J Appl Phys2002,41,2:1
13Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications显示文摘A monolayer of Sr2Nb3Oio(SNO)is deposited on the Pt/Ti/SiCWSi(Pt?Si)or Pt/Ti/polyimide(Pt-Pl)substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline(Nai_xKx)NbO3(NKN)film at 350℃.The crystalline NKN film is grown along the[001]direction on the SNO/Pt-Si(or SNO/Pt-PI)substrate.Due to the presence of oxygen vacancies in the SNO seed-layer,the NKN film exhibits low ferroelectric properties and large leakage current.To ameliorate these properties,the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300℃,which removes the oxygen vacancies.Consequently,the NKN film deposited on this substrate exhibits promising electrical properties,namely a dielectric constant of 278,dissipation factor of 1.7%,a piezoelectric 8nstant of 175 pm`V^-1,and a leakage current density of 6.47 x 10^-7 A cm^-2 at-0.2 MV crrT1.Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350°C.Hence,the NKN films grown on the SNO seed-layer at 350°C can be applied to electronic devices with flexible polymer substrates.Jong-Hyun Kim Sang Hyo Kweon Sahn Nahm 2019Nano Research2019,12,10:1
14Effect of B 2 O 3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg 1/3 Nb 2/3 )O 3 ceramics显示文摘Jong-Bong Lim Dong-Hyun Kim Sahn Nahm Jong-Hoo Paik Hwack-Joo Lee 2005Materials Research Bulletin2005,,6:1
15Artificial synaptic and self-rectifying properties of crystalline(Na_(1-x)K_(x))NbO_(3)thin films grown on Sr_(2)Nb_(3)O_(10)nanosheet seed layers显示文摘Crystalline(Na_(1-x)K_(x))NbO_(3)(NKN)thin films were deposited on Sr_(2)Nb_(3)O_(10)/TiN/Si(S-TS)substrates at 370°C.Sr_(2)Nb_(3)O_(10)(SNO)nanosheets served as a template for the formation of crystalline NKN films at low temperatures.When the NKN film was deposited on one SNO monolayer,the NKN memristor exhibited normal bipolar switching characteristics,which could be attributed to the formation and destruction of oxygen vacancy filaments.Moreover,the NKN memristor with one SNO monolayer exhibited artificial synaptic properties.However,the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties,with the two SNO monolayers acting as tunneling barriers in the memristor.The conduction mechanism of the NKN memristor with two SNO monolayers in the highresistance state is attributed to Schottky emission,direct tunneling,and Fowler–Nordheim(FN)tunneling.The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling.Additionally,the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties.Therefore,an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.In-Su Kim Jong-Un Woo Hyun-Gyu Hwang Bumjoo Kim Sahn Nahm 2022Journal of Materials Science & Technology2022,,28:0
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