维普期刊资源整合服务平台（V6.5）

41篇 您的检索式：作者名="S N Rashkeev"

选中清除导出查看参考文献查看引证文献引用追踪共3页首页上一页第1页下一页末页 /3 跳转

	题名	作者	年代	出处	被引量
1	Optical-absorption bands in the 1-3 eV range in n-type SiC polytypes 显示文摘	LIMPIJUMNONG S LAMBRECHT W R L RASHKEEV S N	1998	Physical Review B1998，57，12：	1
2	Transport in molecular transistors:Symmetry effects and nonlinearities显示文摘	S N Rashkeev M Di Ventra S T Pantlides		Phys Rev B0，62，03：	1
3	H2O and O2 molecules in amorphous SiO2: Defect formation and annihilation mechanisms 显示文摘	Bakos T Rashkeev S N Pantelides S T	2004	Physical Review B2004，69，：	1
4	Physical model for enhanced interface-trap formation at low dose rates 显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，：	1
5	Physical model for enhanced interface-trap formation at low dose rate显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，38，6：	1
6	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sei2002，49，6：	1
7	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
8	Physical model for enhanced interface-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
9	Proton-induced defect generation at the SiSiO2 interface 显示文摘	RASHKEEV S N FLEETWOOD D M SCHRIMPF R D	2001	IEEE Trans Nucl Sci2001，48，6：	1
10	Ab initio calculations of the electronic structure of 1,1-diamino-2,2-dinitroethylene显示文摘	M M Kuklja S N Rashkeev F J Zerilli	2003	Shock compression of condensed Matter2003，，：	1
11	Effects of Hydrogen Motion on Interface Trap Formation and Annealing 显示文摘	Rashkeev S N Fleetwood D M Schrimpf R D	2004	51 (6) :3158 - 31632004，51，6：	1
12	Physical model for enhanced interface-trap formation at low dose rates 显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
13	显示文摘	Rashkeev S N Limpijumnong S Lambrecht W R L	1999	Phys Rev B1999，59，：	1
14	显示文摘	Rashkeev S N Lambrecht W R L	2001	Phys Rev B2001，63，16：	1
15	Physical model for enhanced interface-trap formation at low dose rates显示文摘	Rashkeev S N Cirba C R Fleetwood D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
16	Physical model for enhanced interface-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
17	Physical model for enhanced inter face-trap formation at low dose rates显示文摘	RASHKEEV S N CIRBA C R FLEETWOOD D M	2002	IEEE Trans Nucl Sci2002，49，6：	1
18	Physical modelfor enhanced interface-trap formation at low doserates显示文摘	RASHKEEV S N CIRBA C R	2002	IEEE Trans Nucl Sci2002，49，6：	1
19	Electronic band structure of SiC polytypes:A discussion of theory and experiment显示文摘	Limpijumnong S Rashkeev S N	1997	Physica Status Solidi (b)1997，202，1：	1
20	Shear-strain-induced chemical reac- tivity of layered molecular crystals 显示文摘	Kuklja M My Rashkeev S N	2007	Appl Phys Lett2007，90，15：	1

返回顶部每页显示：

共3页首页上一页第1页下一页末页 /3 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示