维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

2篇 您的检索式：作者名="Ruiliang SONG"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Theoretical analysis and simulation of InP-based uni-traveling-carrier photodetector显示文摘In this paper the photocurrent response of InP-based unitraveling-carrier photodetectors(UTC-PDs) is analyzed using the drift-diffusion approach.Based on the theoretical analysis,an InP/InGaAs UTC-PD is modeled utilizing a numerical device simulator(ATLAS),and the physics of the device's operation and its performance as a function of biasing and power level are simulated.The simulation results indicate that the linear dynamic range is up to 60 mW,the f-3 dB is about 40 GHz and the full-width at half-maximum(FWHM) of the current pulse is 28 ps with 10 mW optical power injection for an optimized structure UTC-PD.	XIE Sheng LIU LiSa KANG WenPing SONG RuiLiang MAO LuHon ZHANG ShiLin	2009	Chinese Science Bulletin2009，54，20：	1
	2	The design and fabrication on gate type resonant tunneling transistor显示文摘In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improve-ment on the performance and parameters of RTT.	Weilian GUO Huilai LIANG Ruiliang SONG Shilin ZHANG Luhong MAO Liuchang HU Jianheng LI Haitao QI Zhen FENG Guoping TIAN Yuehui SHANG Yongqiang LIU Yali LI Mingwen YUAN Xiaobai LI	2008	Frontiers of Electrical and Electronic Engineering in China2008，3，2：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费