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16篇 您的检索式：作者名="Roccaforte F"

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		题名	作者	年代	出处	被引量
	1	Temperature dependence of the specific resistance in Ti-AI-Ni-Au contacts on n-type GaN显示文摘	Iucolano F Roccaforte F Alberti A	2006	J Appl Phys2006，100，12：	1
	2	Experimental eval- uation of different passivation layers on the performance of 3 kV 4H-SiC BJTs显示文摘	Eriksson J Weng M H Roccaforte F	2010	Mater Sci Forum2010，677，：	1
	3	Photocurrent gain in 4H-SiC interdigit schottky UV detectors with a thermally grown oxide layer 显示文摘	SCIUTO A ROCCAFORTE F FRANCO S D	2007	Applied Physics Letters2007，90，22：	1
	4	Temperature dependence of the specific resistance in Ti-Al-Ni- Au contacts on n-type GaN显示文摘	Iucolano F Roccaforte F Alberti A	2006	J Appl Phys2006，100，12：	1
	5	Pho-tocurrent gain in 4H-SiC interdigit schottky UV detectorswith a thermally grown oxide layer显示文摘	SCIUTO A ROCCAFORTE F FRANCO S D	2007	Appl Phys Lett2007，90，22：	1
	6	Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide显示文摘	ROCCAFORTE F MAKHTARI A	2002	Microelectron Eng2002，60，12：	1
	7	High responsivity 4H-SiC schottky UV photodiodes based on the pinch off surface effect显示文摘	Sciuto A Roccaforte F Franco S D	2006	Appl Phys Lett2006，89，08：	1
	8	Highly reproducible ideal SiC Schottky rectifiers:effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height显示文摘	ROCCAFORTE F la via F RAINERI V	2003	Applied Physics:A Materials Science & Processing2003，77，6：	1
	9	Nanoscale carrier transport in Ti/A1/Ni/Au Ohmic contacts on AIGaN epilayers grown on Si(111)显示文摘	F Roccaforte F Iueolano F Giannazzo	2006	Applied Physics Letters2006，89，2：	1
	10	Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide显示文摘	la via F ROCCAFORTE F MAKHTARI A	2002	Microelectronic Engineering2002，60，12：	1
	11	Impact of the morphological and electrical properties of SiO2/4H SiC interfaces on the behavior of 4H SiC MOSFET显示文摘	ROCCAFORTER F FIORENZA P GIANNAZZO F	2013	ECS Journal of Solid State Science and Technology2013，2，8：	1
	12	Improvement of high temperature stability of Nickel contacts on n-type 6H-SiC显示文摘	Roccaforte F Via F La	2001	Appl Surf Sci2001，184，：	1
	13	Highly reproducible ideal SiC Schottkyrectifiers: effects of surface preparationand thermal annealing on the Ni/6H-SiC barrier height 显示文摘	ROCCAFORTE F LA V F RAINERI V	2003	Appl Phys A2003，77，6：	1
	14	Pho- tocurrent gain in 4H-SiC interdigit schottky UV detectors with a thermally grown oxide layer 显示文摘	SCIUTO A ROCCAFORTE F FRANCO S D	2007	Appl Phys Lett2007，90，22：	1
	15	Ohmic contacts to SiC显示文摘	Roccaforte F La Via F Raineri V	2005	Int J of High Speed Electronics and Systems2005，15，4：	1
	16	Crystallization mechanism of amorphous silicon carbide 显示文摘	CALCAGNO L MUSUMECI P ROCCAFORTE F	2001	Ap- plied Surface Science2001，184，1：	1

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