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您的检索式：作者名="Ricky K.Y.Fu"
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| 1 | 高功率脉冲磁控溅射的阶段性放电特征显示文摘本文从放电靶电流出发,采用一种新的研究方法,即将靶电流分解为多个代表具体放电特性的特征参数,全面而系统的研究了不同的工作气压条件下,靶电流各特征参数随靶电压的增加而进行的演化.结果发现高功率脉冲磁控溅射技术(HPPMS)放电靶电流在靶电压由低向高增加的过程中,出现靶电流峰值和平台值的交替变化,体现出明显的阶段性放电特征,且不同的放电阶段在不同气压下出现一定的移动,会在测量范围内出现某些放电阶段的缺失.本文还通过等离子体发射光谱对HPPMS放电靶前等离子体测量发现五个不同的放电阶段分别主要对应氩原子、铬原子、氩离子、铬离子和氩、铬高价离子的放电,但不同的放电条件下相邻的阶段会出现一定程度的交叠. | 吴忠振 田修波 李春伟 Ricky K.Y.Fu 潘锋 朱剑豪 | 2014 | 物理学报2014，63，17： | 12 |
| 2 | 高压耦合高功率脉冲磁控溅射的增强放电效应显示文摘等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术,具有广阔的应用前景,尤其适用于高载荷工况下服役的功能涂层制备.该技术中金属等离子体源是关键,而现有的脉冲阴极弧源结构复杂,且由于伴随'金属液滴'而需要增加过滤装置.本文研究了另一种简单结构的金属等离子体源备选一高功率脉冲磁控溅射源(HPPMS)的放电特性,采用等离子体发射光谱仪探索了不同的耦合高压对HPPMS放电靶电流特性和等离子体特性的作用.发现耦合高压对HPPMS放电有明显的促进作用,相同靶电压下的放电强度大幅增加,相对于金属放电,耦合高压对气体放电的促进作用更加明显,但在自溅射为主的高压放电阶段对金属放电的促进作用明显增强.讨论了耦合高压对HPPMS放电的增强机制,发现耦合高压自辉光放电、耦合高压和HPPMS电压构成双向负压形成的空心阴极效应,以及耦合高压鞘层改善的双极扩散效应都对HPPMS放电的增强有明显作用. | 吴忠振 田修波 潘锋 Ricky K.Y.Fu 朱剑豪 | 2014 | 物理学报2014，63，18： | 5 |
| 3 | Novel method of separating macroporous arrays from p-type silicon substrate显示文摘This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching.The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers,which can be used as electron multipliers and three-dimensional Li-ion microbatteries.Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips.In this way the silicon microchannel can be separated from the substrate when the desired depth is reached,then it can be cut into the desired shape by using a laser cutting machine.Also,the mechanism of lateral etching is proposed. | 彭波波 王斐 刘涛 杨振亚 王连卫 Ricky K.Y.Fu 朱剑豪 | 2012 | Journal of Semiconductors2012，33，4： | 0 |
| 4 | Uniformity of Plasma Density and Film Thickness of Coatings Deposited Inside a Cylindrical Tribe by Radio Frequency Sputtering显示文摘Plasma surface modification of the inner wall of a slender tube is quite difficult toachieve using conventional means.In the work described here,an inner coaxial radio frequency(RF)copper electrode is utilized to produce the plasma and also acts as the sputtered targetto deposit copper films in a tube.The influence of RF power,gas pressure,and bias voltageon the distribution of plasma density and the uniformity of fihn thickness is investigated.Theexperimental results show that the plasma density is higher at the two ends and lower in themiddle of the tube.A higher RF power and pressure as well as larger tube bias lead to a higherplasma density.Changes in the discharge parameter only affect the plasma density uniformityslightly.The variation in the film thickness is consistent with that of the plasma density along thetube axis for different RF power and pressure.Although the plasma density increases with highertube biases,there is an optimal bias to obtain the highest deposition rate.It can be attributed tothe reduction in self-sputtering of the copper electrode and re-sputtering effects of the depositedfilm at higher tube biases. | 崔江涛 田修波 杨士勤 胡涛 Ricky K.Y.FU Paul K.CHU | 2008 | Plasma Science and Technology2008，10，5： | 0 |
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