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43篇 您的检索式：作者名="Perlin P"

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	题名	作者	年代	出处	被引量
1	Singlequantum well InGaN green light emitting diode degradation under high electrical stress显示文摘	BARTON D L OSINSKI M PERLIN P	1999	Microelectronics Reliability1999，39，8：	1
2	Efects of high electrical stress on GaN/InGaN /AlGaN single-quantum-well light-emitting diodes显示文摘	OSINSKI M BARTON DL PERLIN P	1998	J of Crystal Growth1998，，：	1
3	'Blue' temperature-induced shift and band-tail emission in In- GaN-based light sources显示文摘	ELISEEV P G PERLIN P LEE J	1997	Appl Phys Lett1997，71，5：	1
4	Raman-scatting studies of aluminum nitride at high pressure显示文摘	Perlin P Polian A Suski T	1993	Phys Rev B1993，47，：	1
5	Latest developments in A1GalnN laser diode technology for de- fence applications 显示文摘	NAJDA S P PERLIN P SUSKI T	2012	Proceedings of SPIE2012，8542，：	1
6	显示文摘	Perlin P Gorczyca I	2001	Phys Rev B2001，64，11：	1
7	显示文摘	Perlin P Suski T Teisseyre H	1995	Phys Rev Lett1995，75，：	1
8	Raman scattering and X-ray-absorption spectroscopy in gallium nitride under high pressure显示文摘	Jauberthiecarillon C	1992	Phys Bev B1992，45，：	1
9	Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes显示文摘	Perlin P Osinski M Eliseev P G	1996	Applied PhysicsLetter1996，69，：	1
10	Pressure Studies of Gallium Nitride: Crystal Growth and Fundamental Electronic Properties 显示文摘	PERLIN P GORCZYCA I CHRISTENSEN N E	1992	Phys Rev B1992，45，13：	1
11	Pressure studies of gallium nitride:Crystal growth and fundamental electronic properties显示文摘	Perlin P Gorczyca I Christensen N E	1992	Phys Rev B1992，45，13：	1
12	Investigation of longitudinaloptical phonon-plasmon coupled modes in highly conducting bulk GaN显示文摘	Perlin P Camassel J Knap W	1995	Appl Phys Lett1995，67，：	1
13	Single- quantum well In-GaN green light emitting diodes degradation under high electrical stress 显示文摘	BARTON D L OSINSKI M PERLIN P	1999	Microelectronics and Reliability1999，39，8：	1
14	Roman scattering and x-ray-absorption spectroscopy in gallium under high pressure显示文摘	Perlin P Jauberthie-carillon C Itie J P	1992	Phys Rev B1992，45，1：	1
15	Raman scattering and X-ray-absorption spectroscopy in gallium nitride under high pressure显示文摘	Perlin P Jauberthie-Carillon C Itie J P	1992	Phys Rev B1992，45，1：	1
16	High Power blue-violet InGaN laser diodes grown onbulkGaNsubstratesbyplas ma-assistedmolecularbeamepitaxy显示文摘	SKIERBISZEWSKI C PERLIN P GRZEGORY I	2005	Semieond sci Tech2005，20，8：	1
17	High pressure phase transition in aluminium nitride 显示文摘	GORCZYCA I CHRISTENSEN N E PERLIN P GRZEGORY I JUN J BOCKOWSKI M	1991	Solid State Communications1991，79，12：	1
18	Single- quantum well InGaN green light emitting diode degrada- tion under high electrical stress 显示文摘	BARTON D L OSINSKI M PERLIN P	1999	Microelectronics Reliability1999，39，8：	1
19	Regional change in carbon dioxide flues of land and oceans science显示文摘	BOUSQUEST P PERLIN P CIAIS P	2000	Science2000，290，：	1
20	Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure 显示文摘	PERLIN P JAUBERTHIE-CARILLON C ITIE J P	1992	Phys Rev B1992，45，：	1

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