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18篇 您的检索式：作者名="Perichaud I"

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		题名	作者	年代	出处	被引量
	1	Direct Correlation of Transition Metal Impurities and Minority Carrier Recombination in Multicrystalline Silicon 显示文摘	Mchugo S A Thompson A C Perichaud I	1998	Applied Physics Letters1998，72，26：	1
	2	Understanding defects in semiconductors as key to advancing device technology显示文摘	Perichaud I	2003	Physica B2003，114，：	1
	3	Gettering of impurities in solar cell显示文摘	Perichaud I	2002	Solar Energy Materials & Solar Cells2002，72，：	1
	4	Gettering of impurities in solar silicon 显示文摘	Perichaud I	2002	Solar Energy Materials & Solar Cells2002，72，：	1
	5	Limiting factors of phosphorus external gettering efficiency in multicrystalline silicon显示文摘	Perichaud I Floret F Martinuzzi S	1993	IEEE1993，，：	1
	6	Gettering of impurities in solar silicon 显示文摘	Perichaud I	2002	Solar Energy Materials & Solar Cells2002，72，：	1
	7	n-Type multic- rystalline silicon wafers prepared from plasma torch refined upgraded metallurgical feedstock 显示文摘	Martinuzzi S Perichaud I Trassy C	2009	Prog Photovoltaic2009，，：	1
	8	Segregation phenomena in large-size cast multicrystalline Si ingots显示文摘	Martinuzzi S Perichaud I Palais O	2007	Solar Energy Mater Solar Cells2007，，91：	1
	9	Multicrystal line silicon prepared by electromagnetic continuous pullingz recent results and comparison to directional solidification material显示文摘	PERICHAUD I MARTINUZZI S DURAND F	2002	Solar Energy Materials and Solar Cells2002，72，14：	1
	10	Segregation phenomena in large size cast multicrystalline Si ingots显示文摘	Martinuzzi S Perichaud I Palaisv O		0，，：	1
	11	Multicrystalline silicon prepared by electromagnetic continuous pulling: recent results and comparison to directional solidification material 显示文摘	Perichaud I Martinuzzi S Durand F	2002	Solar Energy Materials and Solar Cells2002，72，：	1
	12	Gettering of Impurities in Solar Silicon 显示文摘	Perichaud I	2002	Solar Energy Materials & Solar Cells2002，72，：	1
	13	Segregation phenomena in large-size cast multicrystalline Si ingots显示文摘	Martinuzzi S Perichaud I Palaisv O	2007	Solar Energy Mater Solar Cells2007，91，：	1
	14	Multicrystalline silicon pre-pared by electromagnetic continuous pulling:recent results andcomparison to directional solidification material 显示文摘	Perichaud I Martinuzzi S Durand F	2002	Solar EnergyMaterials and Solar Cells2002，72，：	1
	15	Efficiency of cavity gettering in single and in multicrystalline silicon wafers显示文摘	Martinuzzi S Henquinet N G Perichaud I	2000	Mater Sci Eng B2000，，71：	1
	16	Gettering of impurities in solar silicon显示文摘	Perichaud I	2002	Solar Energy Materials and Solar Cells2002，72，1：	1
	17	Understanding defects in semiconductors as key to advancing device technology 显示文摘	Perichaud I	2003	Physica B2003，340，：	1
	18	C-ettering of impurities in solar silicon显示文摘	Perichaud I	2002	Solar Energy Mater Solar Cells2002，72，：	1

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