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4篇 您的检索式:作者名="Pengbin Lu"
    题名 作者 年代 出处 被引量
1Analysis of well casing connection pullout显示文摘Lu Shuanlu Han Yong Terry Changyi Qin Yuan Pengbin 2005Engineering Failure Analysis2005,,4:2
2A self-power photodetector based on controlled growth of single crystal MAPbBr_(3)/WO_(3) heterojunction显示文摘Compared with polycrystalline films, perovskite single crystal is considered as a promising photoelectric material due to its unique advantages in quantum efficiency and carrier diffusion length. In this work, the micron-thickness MAPbBr_(3) single crystal was prepared through a highly repeatable process based on the crystal seed dissolution-growth method. A heterojunction of MAPbBr_(3)/WO_(3) single crystal was realized through a simple thermal evaporation process, and the integrated C/MAPbBr_(3)/WO_(3)/C device demonstrated self-powered characteristics and high photoelectric performance, which showed good responsivity of about 111 mA/W, detectivity of 9.64×10^(11) Jones and fast response speed(0.11/0.56 ms). Meanwhile, the device exhibited good rectification performance(ratio of 125 at ±2 V) and reduced dark current due to the built-in electric field formed in the heterojunction. This study provides a facile, flexible, and highly repeatable method for the preparation of high-performance photodetectors based on MAPbBr_(3) single crystals with micrometer thickness.YAO JianFeng ZHANG Hu LU JunZheng YANG LiangPan LIU DuanWangDe HU YaLi ZENG Wei GUI PengBin CHEN ZhiLiang REN XinGang 2023Science China(Technological Sciences)2023,66,9:0
3Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications显示文摘We have successfully demonstrated a 1 Kb spin-orbit torque(SOT)magnetic random-access memory(MRAM)multiplexer(MUX)array with remarkable performance.The 1 Kb MUX array exhibits an in-die function yield of over 99.6%.Additionally,it provides a sufficient readout window,with a TMR/RP_sigma%value of 21.4.Moreover,the SOT magnetic tunnel junctions(MTJs)in the array show write error rates as low as 10^(-6)without any ballooning effects or back-hopping behaviors,ensuring the write stability and reliability.This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from-40 to 125℃.Overall,the demonstrated array shows competitive specifications compared to the state-of-the-art works.Our work paves the way for the industrial-scale production of SOT-MRAM,moving this technology beyond R&D and towards widespread adoption.Chuanpeng Jiang Jinhao Li Hongchao Zhang Shiyang Lu Pengbin Li Chao Wang Zhongkui Zhang Zhengyi Hou Xu Liu Jiagao Feng He Zhang Hui Jin Gefei Wang Hongxi Liu Kaihua Cao Zhaohao Wang Weisheng Zhao 2023Journal of Semiconductors2023,44,12:0
4Unveiling the planar deformation mechanisms for improved formability in pre-twinned AZ31 Mg alloy sheet at warm temperature显示文摘To investigate the role of pre-twins in Mg alloy sheets during warm planar deformation, the stretch forming is conducted at 200 ℃. Results suggest the formability of the pre-twinned AZ31 Mg alloy sheet is enhanced to 11.30 mm. The mechanisms for the improved formability and the deformation behaviors during the planar stretch forming are systematically investigated based on the planar stress states. The Schmid factor for deformation mechanisms are calculated, the results reveal that planar stress states extremely affect the Schmid factor for {10-12}twinning. The detwinning is activated and the prismatic slip is enhanced in the pre-twinned sheet, especially under the planar extension stress state in the outer region. Consequently, the thickness-direction strain is accommodated better. The dynamic recrystallization(DRX) type is continuous DRX(CDRX) regardless of the planar stress state. However, the CDRX degree is greater under the planar extension stress state.Some twin lattices deviate from the perfect {10-12} twinning relation due to the planar compression stress state and the CDRX. The basal texture is weakened when the planar stress state tends to change the texture components.Xiaohuan Pan Lifei Wang Pengbin Lu Hua Zhang Guangsheng Huang Liuwei Zheng Bin Xing Weili Cheng Hongxia Wang Wei Liang Kwang Seon Shin 2023Journal of Magnesium and Alloys2023,11,12:0
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