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您的检索式：作者名="PRIYA GOPAL"
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| 1 | Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe显示文摘Ferroelectric Rashba semiconductors(FERSCs)have recently emerged as a promising class of spintronics materials.The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties,including ferroelectric switching of Rashba spin texture,suggests that the electron’s spin could be controlled by using only electric fields.In this regard,recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSCs,GeTe and SnTe,appear extremely relevant.Here,by employing density functional theory calculations,we investigate spin Hall effect(SHE)in these materials and show that it can be large either in ferroelectric or paraelectric structure.We further explore the compatibility between doping required for the practical realization of SHE in semiconductors and polar distortions which determine Rashba-related phenomena in FERSCs,but which could be suppressed by free charge carriers. | Haihang Wang Priya Gopal Silvia Picozzi Stefano Curtarolo Marco Buongiorno Nardelli Jagoda Sławińska | 2020 | npj Computational Materials2020，，1： | 1 |
| 2 | Nicola a spalclin, transition metal doped TiO2 and ZnO present stalus of the field显示文摘 | Rebecca Janisch Priya Gopal | 2005 | J Phys Condens Matter2005，17，： | 1 |
| 3 | Absorption and emission modulation in a MoS2–GaN(0001) heterostructure by interface phonon–exciton coupling显示文摘Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides(TMDs)interfaced to gallium nitride(Ga N)are excellent material systems to realize broadband light absorbers and emitters due to their close proximity in the lattice constants.The surface properties of a polar semiconductor such as Ga N are dominated by interface phonons,and thus the optical properties of the vertical heterostructure are influenced by the coupling of these carriers with phonons.The activation of different Raman modes in the heterostructure caused by the coupling between interfacial phonons and optically generated carriers in a monolayer MoS_2–Ga N(0001)heterostructure is observed.Different excitonic states in MoS_2 are close to the interband energy state of intraband defect state of Ga N.Density functional theory(DFT)calculations are performed to determine the band alignment of the interface and revealed a type-I heterostructure.The close proximity of the energy levels and the excitonic states in the semiconductors and the coupling of the electronic states with phonons result in the modification of carrier relaxation rates.Modulation of the excitonic absorption states in MoS_2 is measured by transient optical pump-probe spectroscopy and the change in emission properties of both semiconductors is measured by steady-state photoluminescence(PL)emission spectroscopy.There is significant red-shift of the C excitonic band and faster dephasing of carriers in MoS_2.However,optical excitation at energy higher than the bandgap of both semiconductors slows down the dephasing of carriers and energy exchange at the interface.Enhanced and blue-shifted PL emission is observed in MoS_2.Ga N band-edge emission is reduced in intensity at room temperature due to increased phonon-induced scattering of carriers in the Ga N layer.Our results demonstrate the relevance of interface coupling between the semiconductors for the development of optical and electronic applications. | YUBA POUDEL JAGODA SLAWINSKA PRIYA GOPAL SAIRAMAN SEETHARAMAN ZACHARIAH HENNIGHAUSEN SWASTIK KAR FRANCIS D'SOUZA MARCO BUONGIORNO NARDELLI ARUP NEOGI | 2019 | Photonics Research2019，7，12： | 0 |
| 4 | IGMAP: An Interactive Mapping and Clustering Platform for Plants显示文摘 | Piyush Priya Nitesh Bandhiwal Gopal Misra Subhashish Mondal Gitanjali Yadav | 2015 | Molecular Plant2015，8，5： | 0 |
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