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您的检索式：作者名="Nicolas Pauc"
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| 1 | GeSnOI mid-infrared laser technology显示文摘GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing.Indeed,Sn alloying and tensile strain can transform them into direct bandgap semiconductors.This growing laser technology however suffers from a number of limitations,such as poor optical confinement,lack of strain,thermal,and defects management,all of which are poorly discussed in the literature.Herein,a specific GeSn-on-insulator(GeSnOI)stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near-and mid-infrared spectral range.Microdisk-shape resonators on mesa structures were fabricated from GeSnOI,after bonding a Ge_(0.9)Sn_(0.1) alloy layer grown on a Ge strain-relaxed-buffer,itself on a Si(001)substrate.The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer.We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation,with up to 30%vertical out-coupling efficiency.As a result,the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering. | Binbin Wang Emilie Sakat Etienne Herth Maksym Gromovyi Andjelika Bjelajac Julien Chaste Gilles Patriarche Philippe Boucaud Frédéric Boeuf Nicolas Pauc Vincent Calvo Jérémie Chrétien Marvin Frauenrath Alexei Chelnokov Vincent Reboud Jean-Michel Hartmann Moustafa El Kurdi | 2021 | Light(Science & Applications)2021，10，12： | 0 |
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