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您的检索式：作者名="Muhammad Asif H"
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| 1 | Functionalised ZnO-nanorod-based selective electrochemi- cal sensor for intracellular glucose 显示文摘 | Muhammad H Asif Syed M Usman Ali Omer Nur | 2010 | Biosens Bioelec- tro2010，25，： | 1 |
| 2 | bidiesel production from waste tallow显示文摘 | Haq Nawaz B Muhammad Asif H Mohammad Q | 2008 | Fuel2008，13，87： | 1 |
| 3 | Ab-initio calculations of bandgap tuning of In1-xGaxY(Y=N,P)alloys for optoelectronic applications显示文摘The III–V alloys and doping to tune the bandgap for solar cells and other optoelectronic devices has remained a hot topic of research for the last few decades.In the present article,the bandgap tuning and its influence on optical properties of In1-xGaxN/P,where(x=0.0,0.25,0.50,0.75,and 1.0)alloys are comprehensively analyzed by density functional theory based on full-potential linearized augmented plane wave method(FP-LAPW)and modified Becke and Johnson potentials(TB-mBJ).The direct bandgaps turn from 0.7 eV to 3.44 eV,and 1.41 eV to 2.32 eV for In1-xGaxN/P alloys,which increases their potentials for optoelectronic devices.The optical properties are discussed such as dielectric constants,refraction,absorption,optical conductivity,and reflection.The light is polarized in the low energy region with minimum reflection.The absorption and optical conduction are maxima in the visible region,and they are shifted into the ultraviolet region by Ga doping.Moreover,static dielectric constant e1(0)is in line with the bandgap from Penn’s model. | Muhammad Rashid Jamil M Mahmood Q Shahid M Ramay Asif Mahmood A Ghaithan H M | 2021 | Chinese Physics B2021，30，11： | 0 |
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