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| 1 | On the evaluation of correction terms in Gauss-Legendre quadrature显示文摘 | Mohankumar N Sen S Ramar R | 2010 | Comput Phys Commun2010，181，1： | 1 |
| 2 | Cytogenetic damage in human blood lymphocytes exposed in vitro to radon 显示文摘 | HAMZA V Z MOHANKUMAR M N | 2009 | Murat Res2009，661，12： | 1 |
| 3 | Cytogenetie dmnage in human blood lymphocytes exposed in vitro to radon 显示文摘 | Hamza V Z Mohankumar M N | 2009 | Mutat Res2009，661，12： | 1 |
| 4 | Human adenovirus 36 induces adiposity, increases insulin sensitivity, and alters hypothalamic mono- amines in rats 显示文摘 | Pasarica M Shin AC Yu M Ou Yang HM Rathod M Jen KL MohanKumar S MohanKumar PS Markward N Dhurandhar NV | 2006 | Obesity2006，14，11： | 1 |
| 5 | Characterization and Antibacterial Activity of Bacteriocin Producing Lactobacillus Isolated from Raw Cattle Milk Sample显示文摘 | MOHANKUMAR A MURUGALATHA N | 2011 | International Journal of Biology2011，3，3： | 1 |
| 6 | On the use of higher-order formula for numerical derivatives in scientific computing显示文摘 | Mohankumar N Auerbach S M | 2004 | Communications in Com- putational Physics2004，161，3： | 1 |
| 7 | A comparison of some quadrature methods for approximating Cauchy principle value integrals 显示文摘 | Natarajan A Mohankumar N | 1995 | J Computational Physics1995，116，2： | 1 |
| 8 | A note on the evaluation of the generalized Fermi-Dirac integral 显示文摘 | Mohankumar N Natarajan A | 1996 | Astrophysical J1996，458，： | 1 |
| 9 | DNA damage and integrity of UV-induced DNA repair in lymphocytes of smokers analysed by the comet assay显示文摘 | Mohankumar M N Janani S Prabhu B K | 2002 | Mutat Res2002，520，12： | 1 |
| 10 | On the use of higherorder formula for numerical derivatives in scientific computing显示文摘 | Mohankumar N Auerbach S M | | 0，，03： | 1 |
| 11 | Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET显示文摘We investigate the performance of an 18 nm gate length AlInN/GaN heterostructure underlap double gate MOSFET,using 2D Sentaurus TCAD simulation.The device uses lattice-matched wideband Al0.83In0.17N and narrowband GaN layers,along with high-k Al2O3 as the gate dielectric.The device has an ultrathin body and is designed according to the ITRS specifications.The simulation is done using the hydrodynamic model and interface traps are also considered.Due to the large two-dimensional electron gas(2DEG) density and high velocity,the maximal drain current density achieved is very high.Extensive device simulation of the major device performance metrics such as drain induced barrier lowering(DIBL),subthreshold slope(SS),delay,threshold voltage(V1), Ion/Ioff ratio and energy delay product have been done for a wide range of gate and underlap lengths.Encouraging results for delay,Ion,DIBL and energy delay product are obtained.The results indicate that there is a need to optimize the Ioff and SS values for specific logic design.The proposed AllnN/GaN heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications. | Hemant Pardeshi Sudhansu Kumar Pati Godwin Raj N Mohankumar Chandan Kumar Sarkar | 2012 | Journal of Semiconductors2012，33，12： | 0 |
| 12 | A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices显示文摘We present a two-dimensional electron gas(2DEG) charge-control mobility variation based drain current model for sheet carrier density in the channel.The model was developed for the AlInGaN/AlN/GaN highelectron -mobility transistor.The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various Al and In molefractions.This physics based ns model fully depends upon the variation of Ef,u0,the first subband E0,the second subband E\,and ns.We present a physics based analytical drain current model using ns with the minimum set of parameters.The analytical results obtained are compared with the experimental results for four samples with various molefraction and barrier thickness.A good agreement between the results is obtained,thus validating the model. | Godwin Raj Hemant Pardeshi Sudhansu Kumar Pati N Mohankumar Chandan Kumar Sarkar | 2013 | Journal of Semiconductors2013，34，4： | 0 |
| 13 | A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect显示文摘In analog circuit design an important parameter,from the perspective of superior device performance,is linearity.The DG MOSFET in asymmetric mode operation has been found to present a better linearity.In addition to that it provides,at the discretion of analog circuit designer,an additional degree of freedom,by providing independent bias control for the front and the back gates.Here a non-quasi-static(NQS)small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD simulations.The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance,Cgd1and Cgd2,the intrinsic front and back distributed channel resistance,Rgd1and Rgd2respectively,the transport delay,m,and the inductance,Lsd.The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data,for symmetric DG MOSFET devices,from the available literature.The device simulation is performed with respect to frequency up to 100 GHz. | Sudhansu Kumar Pati Kalyan Koley Arka Dutta N Mohankumar Chandan Kumar Sarkar | 2013 | Journal of Semiconductors2013，34，11： | 0 |
| 14 | Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region显示文摘We propose an analytical model for drain current and inversion charge in the subthreshold region for an underlap DG FinFET by using the minimum channel potential method,i.e.,the virtual source.The flicker and thermal noise spectral density models are also developed using these charge and current models expression.The model is validated with already published experimental results of flicker noise for DG FinFETs.For an ultrathin body,the degradation of effective mobility and variation of the scattering parameter are considered.The effect of device parameters like gate length Lg and underlap length Lun on both flicker and thermal noise spectral densities are also analyzed.Increasing Lg and Lun,increases the effective gate length,which reduces drain current,resulting in decreased flicker and thermal noise density.A decrease of flicker noise is observed for an increase of frequency, which indicates that the device can be used for wide range of frequency applications. | Sudhansu Kumar Pati Hemant Pardeshi Godwin Raj N Mohankumar Chandan Kumar Sarkar | 2013 | Journal of Semiconductors2013，34，2： | 0 |
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