维普期刊资源整合服务平台（V6.5）

23篇 您的检索式：作者名="MONEMAR B"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Group Ⅲ-nitride based hetero and quantum structures 显示文摘	Monemar B Pozina G	2000	Prog Quantum Electron2000，24，6：	1
2	Fundamental energy gap of GaN from photoluminescence excitations pectra显示文摘		1974	Phys Rev1974，10，：	1
3	Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy显示文摘	Buyanova I A Chen W M Monemar B		0，，2：	1
4	Ⅲ -Ⅴ Nitrides-Important future electronic materials 显示文摘	Monemar B	1999	Journal of Materials Science:Materials in Electronics1999，10，：	1
5	On the lattice pa?rametersof GaN显示文摘	Darakchieva V Monemar B Usui A	2007	Appl Phys Lett2007，91，03：	1
6	A Novel Mild routeto Nanocrystalline selenides at Room Temperature显示文摘	Bergman J P Monemar B	1999	Physica Status Solidi(b)1999，216，1：	1
7	显示文摘	Monemar B	1974	Phys Rev B1974，10，：	1
8	Bound excitons in GaN显示文摘	Monemar B	2001	J Phys Con?dens Matter2001，13，32：	1
9	Photoluminescence of GaN: effect of electron irradiation 显示文摘	Buyanova I A Wagner M Chen W M Monemar B Lindstrtim J L Amano H Akasaki I	1998	Applied Physics Letters1998，73，20：	1
10	Origin of multiple peak photoluminescence in InGaN/G aN multiple quantum wells显示文摘	Bergnan J P Monemar B	2000	J Appl Phys2000，88，5：	1
11	Growth of thick GaN layers with hydride vapour phase epitaxy显示文摘	MONEMAR B LARSSON H HEMMINGSSON C	2005	Journal of Crystal Growth2005，281，1：	1
12	Fundamental Energy Gap of GaN from Photoluminescence Excitation Spectra 显示文摘	MONEMAR B	1974	Phys Rev1974，10，2：	1
13	Defect related issues in the“current roll-off”in In Ga N based light emitting diodes显示文摘	MONEMAR B SERNELIUS B E	2007	Applied Physics Letters2007，91，18：	1
14	Defect related issues in the 'current roll-off' in InGaN based light emitting diodes显示文摘	Monemar B Sernelius B E	2007	Appl Phys Lett2007，91，18：	1
15	Fundamental Energy Gap of GaN from Photolumineseenee Exeitation Spectra显示文摘	Monemar B	1974	Physical Review B1974，10，2：	1
16	Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices显示文摘	SHUBINA T V TOROPOV A A SOROKIN S V IVANOV S V KOPEV P S POZINA G R BERQMAN J P MONEMAR B	1998	Thin Solid Films1998，336，12：	1
17	Fundamental energy gap of GaN from photoluminescence excitation spectra 显示文摘	MONEMAR B	1974	Phys Rev: B1974，10，2：	1
18	Fundamental energy gap of GaN from photoluminescence excitations pectra 显示文摘	Monemar B	1974	Phys Rev1974，10，：	1
19	Optical and structural characterization of Ga (In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy 显示文摘	Pozina G Bergman J P Monemar B	1999	Physica Status Solidi (b)1999，216，1：	1
20	Basic Ⅲ-Ⅴ Nitride Research - Past, Present and Future 显示文摘	Monemar B	1998	Journal of Crystal Growth1998，189，2：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示