1篇
您的检索式：作者名="M.SAIF ISLAM"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm显示文摘In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency(EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% at 1550 nm with an intrinsic Ge layer of only 2 μm thickness, showing much improvement compared to one without microholes. More than threefold EQE improvement is also observed at longer wavelengths beyond 1550 nm. These results make the microhole-enabled Ge-on-Si photodiodes promising to cover both the existing C and L bands, as well as a new data transmission window(1620–1700 nm),which can be used to enhance the capacity of conventional standard single-mode fiber cables. These photodiodes have potential for many applications, such as inter-/intra-datacenters, passive optical networks, metro and longhaul dense wavelength division multiplexing systems, eye-safe lidar systems, and quantum communications.The CMOS and Bi CMOS monolithic integration compatibility of this work is also attractive for Ge CMOS,near-infrared sensing, and communication integration. | HILAL CANSIZOGLU CESAR BARTOLO-PEREZ YANG GAO EKATERINA PONIZOVSKAYA DEVINE SOROUSH GHANDIPARSI KAZIM G.POLAT HASINA H.MAMTAZ TOSHISHIGE YAMADA ALY F.ELREFAIE SHIH-YUAN WANG M.SAIF ISLAM | 2018 | Photonics Research2018，6，7： | 1 |
您所在的机构暂未开通此部分的功能，请联系管理员