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		题名	作者	年代	出处	被引量
	1	Optical and electrical properties of electrochemically deposited polyaniline/CeO2 hybrid nanocomposite film显示文摘This paper reports the optical and electrical properties of electrochemically deposited polyaniline (PANI)/cerium oxide(CeO2) hybrid nano-composite film onto indium-tin-oxide(ITO) glass substrate.UV-visible spectroscopy andⅠ-Ⅴcharacteristic were performed to study the optical and electrical parameters of the electrochemically deposited film.The film exhibited a strong absorption below 400 nm(3.10 eV) with a well defined absorbance peak at around 285 nm(4.35 eV).The estimated band gap of the CeO2 sample was 3.44 eV,higher than bulk CeO2 powder(Eg = 3.19 eV) due to the quantum confinement effect.Optical and electrochemical characteristics indicated that the electrical properties of PANI/CeO2 hybrid nanocomposite film arc dominated by PANI doping.	Anees A.Ansari M.A.M.Khan M.Naziruddin Khan Salman A.Alrokayan M.Alhoshan M.S.Alsalhi	2011	Journal of Semiconductors2011，32，4：	1
	2	Nanoporous characteristics of sol-gel-derived ZnO thin film显示文摘Sol-gel-derived nanoporous ZnO film has been successfully deposited on glass substrate at 200℃and subsequently annealed at different temperatures of 300,400 and 600℃.Atomic force micrographs demonstrated that the film was crack-free,and that granular nanoparticles were homogenously distributed on the film surface. The average grain size of the nanoparticles and RMS roughness of the scanned surface area was 10 nm and 13.6 nm,respectively,which is due to the high porosity of the film.Photoluminescence(PL) spectra of the nanoporous ZnO film at room temperature show a diffused band,which might be due to an increased amount of oxygen vacancies on the lattice surface.The observed results of the nanoporous ZnO film indicates a promising application in the development of electrochemical biosensors due to the porosity of film enhancing the higher loading of biomacromolecules (enzyme and proteins).	Anees A.Ansari M.A.M.Khan M.Alhoshan S.A.Alrokayan M.S.Alsalhi	2012	Journal of Semiconductors2012，33，4：	0

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