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您的检索式：作者名="Liang Haochen"
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| 1 | Improved Approximate Minimum Degree Ordering Method and Its Application for Electrical Power Network Analysis and Computation显示文摘Electrical power network analysis and computation play an important role in the planning and operation of the power grid,and they are modeled mathematically as differential equations and network algebraic equations.The direct method based on Gaussian elimination theory can obtain analytical results.Two factors affect computing efficiency:the number of nonzero element fillings and the length of elimination tree.This article constructs mapping correspondence between eliminated tree nodes and quotient graph nodes through graph and quotient graph theories.The Approximate Minimum Degree(AMD)of quotient graph nodes and the length of the elimination tree nodes are composed to build an Approximate Minimum Degree and Minimum Length(AMDML)model.The quotient graph node with the minimum degree,which is also the minimum length of elimination tree node,is selected as the next ordering vector.Compared with AMD ordering method and other common methods,the proposed method further reduces the length of elimination tree without increasing the number of nonzero fillings;the length was decreased by about 10%compared with the AMD method.A testbed for experiment was built.The efficiency of the proposed method was evaluated based on different sizes of coefficient matrices of power flow cases. | Jian Guo Hong Liang Songpu Ai Chao Lu Haochen Hua Junwei Cao | 2021 | Tsinghua Science and Technology2021，26，4： | 1 |
| 2 | Morphology filter and it's applications in TV Tracks 显示文摘 | Zhu Zhenfu Liu Zhongling Liang Haochen | 2001 | SPIE2001，4170，： | 1 |
| 3 | Grayscale morphological filter tbr small target detection 显示文摘 | Zhu Zhenfu Li Zhongling Liang Haochen | 2000 | Proceedings of SPIE-The International Society for Optical Engineering2000，，4130： | 1 |
| 4 | Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers显示文摘Wide bandgap GaN-based HEMTs have shown great potential as key components in various power electronic systems but still face challenges in the pursuit of devices with stable operation capability especially in harsh environments.Here,we report a high-performance double heterojunction(DH)based AlGaN/GaN HEMT by incorporating a decreasing-Al-composition(DAC)graded AlGaN back barrier(BB)beneath the GaN channel.Thanks to the improved electron confinement enabled by graded BB,the DHHEMT exhibits significantly improved on-state drain current density and off-state breakdown voltage compared with a single heterojunction(SH)based HEMT.More intriguingly,with an additional Si Nx passivation layer,the surface states of the DH-HEMTs can be effectively suppressed,leading to an almost constant offstate leakage current and negligible gate contact degradation across the temperature range from 25℃to 150℃.These results highlight the superiority and reliability of the proposed graded AlGaN BB to boost device characteristics for applications under high temperatures and harsh conditions. | Haochen ZHANG Yue SUN Kunpeng HU Lei YANG Kun LIANG Zhanyong XING Hu WANG Mingshuo ZHANG Huabin YU Shi FANG Yang KANG Haiding SUN | 2023 | Science China(Information Sciences)2023，66，8： | 0 |
| 5 | Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction显示文摘The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications. | Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li | 2024 | Journal of Semiconductors2024，45，4： | 0 |
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