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| 1 | Controllable synthesis and optical properties of nano-CeO 2 via a facile hydrothermal route显示文摘 | Fanming Meng Leini Wang Jingbiao Cui | 2013 | Journal of Alloys and Compounds2013，，： | 1 |
| 2 | Effects of exposure to copper and malathion on metallothionein levels and acetylcholinesterase ac- tivity of the mussel Mytilus edulis and the clam Macoma balthica from the Northern Baltic Sea 显示文摘 | LEHTONEN K K LEINI S | 2003 | Bulletin of Environmental Contamination and Toxicology2003，71，3： | 1 |
| 3 | PD‐1 negatively regulates interleukin‐12 expression by limiting STAT‐1 phosphorylation in monocytes/macrophages duringchronic hepatitis C virus infection显示文摘 | Cheng J.Ma LeiNi YingZhang C.L.Zhang Xiao Y.Wu Antwan N.Atia PennyThayer Jonathan P.Moorman Zhi Q.Yao | 2011 | Immunology2011，，3： | 1 |
| 4 | Effects of Exposure to Copper and Malathion on Metallothionein Levels and Acetylcholinesterase Activity of the Mussel Mytilus edulis and the Clam Macoma balthica from the Northern Baltic Sea显示文摘 | K. K. Lehtonen S. Leini? | 2003 | Bulletin of Environmental Contamination and Toxicology2003，，3： | 1 |
| 5 | Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits显示文摘The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)TFTs.The improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction interface.Besides,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of 13.The effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics. | Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins | 2023 | Journal of Materials Science & Technology2023，，28： | 0 |
| 6 | Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO_(x) transistors and exploration in digital circuits显示文摘In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated respectively.Results have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band theory.The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V.To confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V.As a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption. | Bing Yang Gang He Qian Gao Wenhao Wang Yongchun Zhang Yufeng Xia Xiaofen Xu Leini Wang Miao Zhang | 2021 | Journal of Materials Science & Technology2021，，28： | 0 |
| 7 | Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots显示文摘This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(−2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress conditions.To demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of 9.3.Low-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise source.Based on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics. | Xiaofen Xu Gang He Leini Wang Wenhao Wang Shanshan Jiang Zebo Fang | 2023 | Journal of Materials Science & Technology2023，，10： | 0 |
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