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| 1 | Cigarette Smoking Increases Risk for Incident Metabolic Syndrome in Chinese Men—Shanghai Diabetes Study显示文摘Objective To determine whether smoking increases the risk for developing metabolic syndrome (MetS) in Chinese men.Methods A total of 693 men with no MetS at baseline were followed for 2.9‐5.5 years.Subjects were divided into nonsmokers,ex‐smokers,and current smokers according to baseline smoking status.Results After adjusting for age,education level,alcohol intake,fasting plasma insulin,HOMA‐IR index,and BMI at baseline and weight change,current smokers were dose‐dependently associated with increased risk for developing new MetS compared with nonsmokers.The odds ratio (OR) was 2.131 (95% CI,1.264,3.592;P<0.01) for the NCEPIII definition or 3.083 (95% CI,1.807,5.295;P<0.01) for the JCDCG definition of MetS.Ex‐smokers who had quit for ≥13 years significantly decreased the risk for developing new MetS defined by the JCDCG definition.Compared with nonsmokers,current smokers were significantly associated with increased incidence of hypertriglyceridemia and low HDL‐C.Conclusion Smoking is a risk factor for developing MetS in Chinese men after adjusting for age,education level,alcohol intake,fasting plasma insulin,HOMA‐IR,BMI,and weight change.This could be due to an increased incidence of dyslipidemia.Smoking cessation for >13 years decreased the risk for developing MetS defined by the JCDCG definition. | ZHU YunXia ZHANG MingLiang HOU XuHong LU JunXi PENG LiangPu GU HuiLin WANG Chen JIA WeiPing | 2011 | Biomedical and Environmental Sciences2011，24，5： | 13 |
| 2 | Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array显示文摘The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes(DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present>2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improved light extraction efficiency. A three-dimensional finite-different time-domain simulation is performed to analyze further in detail the TE-and TM-polarized photon extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters. | LIANG ZHANG YANAN GUO JIANCHANG YAN QINGQING WU YI LU ZHUOHUI WU WEN GU XUECHENG WEI JUNXI WANG JINMIN LI | 2019 | Photonics Research2019，7，9： | 8 |
| 3 | Study of the morphology evolution of AlN grown on nanopatterned sapphire substrate显示文摘This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition.The substrate with concave cones was fabricated by nano-imprint lithography and wet etching.Two samples with different epitaxy procedures were fabricated,manifesting as two-dimensional growth mode and three-dimensional growth mode,respectively.The results showed that growth temperature deeply influenced the growth modes and thus played a critical role in the coalescence of AlN.At a relatively high temperature,the AlN epilayer was progressively coalescence and the growth mode was two-dimensional.In this case,we found that the inclined semi-polar facets arising in the process of coalescence were{112^-1}type.But when decreasing the temperature,the{112^-2}semi-polar facets arose,leading to inverse pyramid morphology and obtaining the three-dimensional growth mode.The 3 D inverse pyramid AlN structure could be used for realizing 3 D semi-polar UV-LED or facet-controlled epitaxial lateral overgrowth of AlN. | Zhuohui Wu Jianchang Yan Yanan Guo Liang Zhang Yi Lu Xuecheng Wei Junxi Wang Jinmin Li | 2019 | Journal of Semiconductors2019，40，12： | 2 |
| 4 | Corporate governance and market valuation in China显示文摘 | Chong-En Bai Qiao Liu Joe Lu Frank M. Song Junxi Zhang | 2004 | Journal of Comparative Economics2004，，4： | 1 |
| 5 | Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations显示文摘The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA- or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices. | Xiangzhuo Wang Huixia Yang Rong Yang Qinsheng Wang Jingchuan Zheng Lu Qiao Xianglin Peng Yongkai Li Dongyun Chen Xiaolu Xiong Junxi Duan Guangyu Zhang Jie Ma Junfeng Han Wende Xiao Yugui Yao | 2019 | Nano Research2019，12，8： | 1 |
| 6 | Cor- porate governance and market valuation in China 显示文摘 | Bai C E Liu Q Lu J Song F M Zhang Junxi | 2004 | Journal of Comparative Economics2004，32，4： | 1 |
| 7 | An Empirical Study on Corporate Governance and Market Valuation in China显示文摘 | Chong-En Bai Qiao Liu Joe Lu Frank M. Song Junxi Zhang | 2006 | Frontiers of Economics in China2006，，1： | 1 |
| 8 | Low serum levels of the innate immune componentficolin-3 is associated with insulin resistance andpredicts the development of type 2 diabetes显示文摘 | CHEN Haibing LU Junxi CHEN Xie | 2012 | J Mol Cell Biol2012，4，： | 1 |
| 9 | Corporate governance and market valuation in Chi- na 显示文摘 | Bai ChongEn Liu Qiao Lu Joe Song Frank M Zhang Junxi | 2004 | Journal of Comparative Economics2004，32，： | 1 |
| 10 | Oral supplementa- tion with cholecalciferol 800IU ameliorates albuminuria in Chi- nese type 2 diabetic patients with nephropthy显示文摘 | Yan Huang Haoyong Yu Junxi Lu | 2012 | PLOS ONE2012，7，50： | 1 |
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