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32篇 您的检索式：作者名="LINNROS J"

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	题名	作者	年代	出处	被引量
1	Recombination-induced stacking faults: evidence for mechanism in hexagonal SiC 显示文摘	GALECKAS A LINNROS J PIROUZ P	2006	Phys Rev Lett2006，96，02：	1
2	Electroluminescence of single silicon nanocrystals 显示文摘	Valenta J Lalic N Linnros J	2004	Appl Phys Lett2004，84，9：	1
3	Optoelectronics : Nanocrystals brighten transistors 显示文摘	Linnros J	2005	Nature Mater2005，4，：	1
4	Controlled fabrication of individual silicon quantum rods yielding high intensity, polarized light emission显示文摘	Bruhn B Valenta J Linnros J	2009	Nanotechnology2009，20，：	1
5	Formation of three-dimensional microstructures by electrochemical etching of silicon显示文摘	Kleimann P Linnros J Juhasz R	2001	Applied Physics Letters2001，79，11：	1
6	Formation of wide and deep pores in silicon by electrochemical etching显示文摘	Kleimann P Linnros J Petersson S	2000	Materials Science and Engineering B2000，69，：	1
7	Formation of wide and deep pores in silicon by electrochemical etching显示文摘	Kleimann P Linnros J Petersson S	2000	Mater Sci Eng2000，6970，：	1
8	Formation of three-di- mensional microstructures by electrochemical etching of sili- con显示文摘	Kleimann P Linnros J Juhasz R	2001	Appl Phys Lett2001，79，：	1
9	Toward the formation of three-dimensional nanostructures by electrochemical etching of silicon显示文摘	Kleimann P Badel X Linnros J	2005	Appl Phys Lett2005，86，18：	1
10	Metallized and ox- idized silicon macropore arrays filled with a scintillator for CCD-based ?(ray Imaging detectors 显示文摘	Badel X Linnro J Kleimann P	2004	IEEE Transactions on Nuclear Science2004，51，3：	1
11	An ?(ray ima- ging pixel detector based on scintillator filled pores in a silicon matrix 显示文摘	Kleimann P Linnros J Frojdh C	2001	Nucl Instr and Meth2001，460，：	1
12	Analysis of the stretched exponential photoluminescence decay from nano- meter-sized silicon crystals in SiO2 显示文摘	LINNROS J LALIC N GALECKAS A	1999	J Appl Phys1999，86，11：	1
13	A porous silicon light-emitting diode with a high quantum efficiency during pulsed operation 显示文摘	LALIC N LINNROS J	1996	Thin Solid Films1996，276，1：	1
14	Characterization of cartier lifetime and diffusivity in 4H-SiC using time-re- solved imaging spectroscopy of electroluminescence 显示文摘	Galeckas A Linnros J Lindstedt M	2003	Materials Science and Engineering2003，，102：	1
15	Investigation of surface recombination and carrier lifetime in 4H/6H- SiC显示文摘	Galeckas A Linnros J Frischholz M	1999	Materials Science and Engineering1999，，6162：	1
16	Analysis of the Stretched Exponential Photoluminescence Decay from Nanometer-sized Silicon Crystals in SiO2显示文摘	LINNROS J LALIC N GALECKAS A GRIVCKAS V	1999	J Appl Phys1999，86，：	1
17	Relevance of the carrier transport change in porous silicon at the onset of one excited pair per crystallite显示文摘	Linnros J Lalic N A Tellefsen J	1997	Thin Solid Films1997，297，：	1
18	Controlled fabrication of individual silicon quantum rods yielding high intensity,polarized light emission显示文摘	Bruhn B Valenta J Linnros J	2009	Nanotechnology2009，20，50：	1
19	High quantum efficiency for a porous silicon light emitting diode under pulsed operation 显示文摘	LINNROS J LALIC N	1995	A P L1995，66，22：	1
20	Auger recombination in 4H-SiC: Unusual temperature behavior 显示文摘	Galeckas A Linnros J Grivickas V	1997	Appl Phys Lett1997，71，22：	1

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