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| 1 | Surface plasmon interference pattern on the surface of a silver-clad planar waveguide as a sub-micron lithography tool显示文摘A new sub-micron photolithography tool has been realized by utilizing the interference of surface plasmon waves(SPWs) on the near surface of a silver(Ag)-clad ultraviolet(UV) planar waveguide.A laser beam with a wavelength of 325 nm was incident into the waveguide core,and suffered a series of total internal reflections on the interfaces between the waveguide core and the cladding layers.The incident light and the reflected light induced two beams of SPWs traveling in contrary directions,which interfered with each other and formed a standing wave as a sub-micron photolithography tool.A near-field scanning optical microscope(NSOM) was employed to measure the intensity distribution of the stationary wave field of the near surface of the Ag layer of the waveguide,anastomosed with theoretical values acquired by use of finite difference time domain(FDTD) simulations.And with this sub-micron photolithography tool a SMG with a period of 79.3 nm,in good agreement with the theoretical value of 80.1 nm,was inscribed on the surface of a self-processing hybrid SiO2/ZrO2 solgel film for the first time. | ZHU QiuXiang HU CanDong WANG WenJie HE Miao ZHOU Jun ZHAO LingZhi PENG ZhiXiang LI ShuTi ZHU Ning ZHANG Yong | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，2： | 3 |
| 2 | Novel sol-gel material for fabrication of a long period waveguide grating filter as a precise thermometer显示文摘A new kind of organic-inorganic hybrid HfO 2/SiO 2 sol-gel material with a large thermo-optic coefficient and a wide linear tunable temperature range has been developed for fabrication of a long period waveguide grating (LPWG) filter,whose parameters were optimized and designed by using finite difference time domain (FDTD) simulations.The LPWG filter,a periodic rectangle-corrugated grating structure,was easily fabricated with soft-lithography technique.At a temperature range from 19°C to 70°C,the fabricated LPWG filter element demonstrated a high temperature sensitivity of about 6.5 nm/°C and a wide linear tunable temperature range of 51°C,so that it can be used as a precise thermometer.Our results are useful for the designs of LPWG filters for the implementation of a wide range of thermo-optic functions. | WANG Xin LI XiaoChan ZHANG Tao HU CanDong ZHU QiuXiang CHEN SiHai LI Yun XU Jia HE Miao NIU QiaoLi ZHAO LingZhi LI ShuTi ZHANG Yong | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，11： | 2 |
| 3 | Enhancement of light output powers of GaN-based light emitting diodes with textured indium tin oxide transparent layer by using corrosive liquid显示文摘In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective. | LI Yun LI XiaoChan ZHANG Tao HE AnHe HU CanDong WANG Xin HE Miao ZHANG Yong NIU QiaoLi ZHAO LingZhi LI ShuTi CHEN XianWen | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，10： | 0 |
| 4 | Epitaxial Lift-Off of Flexible GaN‑Based HEMT Arrays with Performances Optimization by the Piezotronic Effect显示文摘High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties. | Xin Chen Jianqi Dong Chenguang He Longfei He Zhitao Chen Shuti Li Kang Zhang Xingfu Wang Zhong Lin Wang | 2021 | Nano-Micro Letters2021，13，4： | 0 |
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