维普中文期刊产品整合服务
1篇 您的检索式:作者名="Kenneth E.Lee"
    题名 作者 年代 出处 被引量
1Efficient above-band-gap light emission in germanium显示文摘We report an above-band-gap radiative transition in the photoluminescence spectra of single crystallineGe in the temperature range of 20-296 K.The temperature-independence of the peak position at ~0.74eV is remarkably different from the behavior of direct and indirect gap transitions in Ge.This transition isobserved in n-type,p-type,and intrinsic single crystal Ge alike,and its intensity decreases with the increaseof temperature with a small activation energy of 56 meV.Some aspects of the transition are analogous toⅢ-Ⅴ semiconductors with dilute nitrogen doping,which suggests that the origin could be related to anisoelectronic defect.Kenneth E.Lee Eugene A.Fitzgerald Lionel C.Kimerling Jurgen Michel 2009Chinese Optics Letters2009,7,4:0
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费