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29篇 您的检索式：作者名="Kalaev"

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	题名	作者	年代	出处	被引量
1	单晶炉导流筒、热屏及炭毡对单晶硅生长影响的优化模拟显示文摘在CZ法生长太阳能级单晶硅中,单晶炉的导流筒、热屏和炭毡对晶体生长有很大影响。通过对上述三个部件进行改进优化,并通过数值模拟对优化前后晶体和熔体的热场、热屏外表面与石英坩埚内壁面之间的氩气流场以及晶体中的热应力进行分析,得出以下结论:石墨导流筒的引入减少了炉体上部的氩气流动涡胞,进而减少了S iO在单晶炉上部的沉积;优化后的热屏减少了加热器对晶体的烘烤,使结晶速率加快;优化后的侧壁炭毡阻止了加热器向上部的热损失。优化后在加热器功耗不变时,结晶速率至少可提高35%,而不增加宏观位错的发生概率。	苏文佳左然 Vladimir Kalaev	2010	人工晶体学报2010，39，2：	22
2	Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method显示文摘	S.E. Demina E.N. Bystrova V.S. Postolov E.V. Eskov M.V. Nikolenko D.A. Marshanin V.S. Yuferev V.V. Kalaev	2007	Journal of Crystal Growth2007，，：	2
3	Simulation of heat transfer and melt flow in Czochralski growth of SiGe crystals显示文摘	SMIRNOVA O V KALAEV V V MAKAROV Y N	2004	J Crystal Growth2004，，266：	1
4	Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of SiGe crystals显示文摘	SMIRNOVA O V KALAEV V V MAKAROV Y N	2006	J Crystal Growth2006，，287：	1
5	3D unsteady computer modeling of industrial scale KY and CZ sapphire crystal growth显示文摘	Demina S E Kalaev V V	2011	J Cryst Growth2011，320，1：	1
6	3D Numerical Simulation of Heat Transfer During Horizontal Direct Crystallization of Corundum Single Crystals 显示文摘	Lukanina M A Hodosevitch K V Kalaev V V	2006	Journal of Crystal Growth2006，287，：	1
7	Gas Flow Effect on Global Heat Transport and Melt Convection in Czochral- ski Silicon Growth 显示文摘	Kalaev V V Evstratov I Makarov Yu	2003	Journal of Crystal Growth2003，249，：	1
8	Micronucleus test of human oral buccal epithelium: problems, progress and prospeets显示文摘	Kalaev VN Artiukhov VG Nechaeva MS	2014	Tsitol Genet2014，48，6：	1
9	Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals 显示文摘	YAKOVLEV E V KALAEV V V EVSTRATOV I Yu	2003	J Cryst Growth2003，252，13：	1
10	Heat Transfer and Convection in Czochralski Growth of Large BGO Crystals显示文摘	Mazaev K Kalaev V Galenin E	2009	Crystal Growth2009，311，15：	1
11	Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth 显示文摘	Lukanin D P Kalaev V V Makarov Y N	2004	Journal of Crystal Growth2004，266，1：	1
12	Calculation of bulk defects in CZ Si growth: Impact of melt turbulent fluctuations 显示文摘	Kalaev V V Lukanin D P Zabelin V A	2003	Journal of Crystal Growth2003，250，1：	1
13	Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells 显示文摘	KULIEV A T DURNEV N V KALAEV V V	2007	J Cryst Growth2007，303，1：	1
14	Numerical analysis of sapphire crystal growth by the Kyropoulos technique显示文摘	S.E. Demina E.N. Bystrova M.A. Lukanina V.M. Mamedov V.S. Yuferev E.V. Eskov M.V. Nikolenko V.S. Postolov V.V. Kalaev	2006	Optical Materials2006，，1：	1
15	Micronucleus test of human oral buccal epithelium: problems, progress and prospects显示文摘	Kalaev VN Artiukhov VG Nechaeva MS	2014	Tsitol Genet2014，48，6：	1
16	Calculation of Bulk Defects in CZ Si Growth:Impact of Melt Turbulent Fluctuations显示文摘	Kalaev V V Lukanin D P Zzbelin V A Makarov Yu N Virbulis J Dornberger E Von Ammon W	2003	Journal of Crystal Growth2003，250，：	1
17	Numerical Study of 3D Unsteady Melt Convection During Industrial-scale CZ Si-crystal Growth显示文摘	Evstratov I Y Kalaev V V Zhmakin A I	2002	Journal of Crystal Growth2002，，：	1
18	Numerical analysis of sapphire crystal growth by the Kyropoulos technique显示文摘	S.E. Demina E.N. Bystrova M.A. Lukanina V.M. Mamedov V.S. Yuferev E.V. Eskov M.V. Nikolenko V.S. Postolov V.V. Kalaev	2006	Optical Materials2006，，：	1
19	Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth显示文摘	V V Kalaev	2007	Journal of Crystal Growth2007，303，：	1
20	3D unsteady computer modelingof industrial scale KY and CZ sapphire crystal growth 显示文摘	Demina S E Kalaev V V	2011	JCryst Growth2011，320，1：	1

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