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24篇 您的检索式：作者名="KOSIER S L"

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	题名	作者	年代	出处	被引量
1	Physical mechanism contributing to enhanced bipolar gain degradation at low dose rates显示文摘	Fleetwood D M Kosier S L Nowlin R N at al	1994	IEEE Trans Nucl Sci1994，41，6：	2
2	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates 显示文摘	Fleetwood D M Kosier S L Nowlin R N	1994	IEEE Trans Nucl Sci1994，41，：	1
3	Physical mechanisms contribution enhanced bipolar gain degradation at low dose rate显示文摘	Fleetwood D M Kosier S L Nowlin R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
4	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	Fleetwood D M Kosier S L Nowlin R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
5	Physical mechanisms contribution to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
6	Charge separation for bipolar transistors显示文摘	Kosier S L Schrimpf R D Nowlin R N	1993	IEEE Trans Nucl Sci1993，40，6：	1
7	Physical mechanisms contributing to erthanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
8	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
9	Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring显示文摘	Gupta Sandhya Beckman J C Kosier S L	2001	IEEE Electron Device Letters2001，22，12：	1
10	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
11	Phys- ical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	Fleetwood D M Kosier S L Nowlin R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
12	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	D M Fleetwood S L Kosier	1994	IEEE Trans on NS1994，41，6：	1
13	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，41，6：	1
14	Charge separation for bipolar transistors显示文摘	Kosier S L Schrimpf R D Nowlin R N	1993	IEEE Trans Nucl Sci1993，40，6：	1
15	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWIN R N	1994	IEEE Transactions on Nuclear Science1994，41，6：	1
16	Dose-rate effects on radiation-induced bipolar junctiontransistor gain degradation 显示文摘	WEI A KOSIER S L SCHRIMPF RD	1994	Appl Phys Lett1994，65，15：	1
17	Physical mechanisms contribution to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N	1994	IEEE Trans Nucl Sci1994，，：	1
18	Charge separation for bipolar transistors显示文摘	Kosier S L Schrimpf R D Nowlin R N	1993	IEEE Trans Nucl Sci1993，40，6：	1
19	Physical mechanisms contribution to enhanced bipolar gain degradation at low dose rates显示文摘	FLEETWOOD D M KOSIER S L NOWLIN R N		0，，06：	1
20	Physical mechanisms contribution enhanced bipolar gain degradation at low dose rates显示文摘	Fleetwood D M Kosier S L Nowlin R N	1994	IEEE Trans Nucl Sci1994，41，6：	1

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