| 2 | Analysis of Mg content of Zn_(1-x)Mg_xO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy显示文摘The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments. | K.Ogata K.Koike S.Sasa M.Inoue M.Yano | 2004 | Science China(Technological Sciences)2004，47，2： | 0 |
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