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2篇 您的检索式:作者名="K.Joy"
    题名 作者 年代 出处 被引量
1Optical parameters induced by phase transformation in RF magnetron sputtered TiO_2 nanostructured thin films显示文摘Pure TiO2 thin films were deposited onto quartz substrates using a ceramic TiO2 target at an elevated substrate temperature of 573 K by RF magnetron sputtering, and an analysis of structural, optical and photoluminescence characteristics of the films upon phase transformation is reported in this paper. Structural investigations using X-ray diffraction revealed that the as-deposited film was amorphous in nature. Thermal annealing for 2 h at 873 K in air resulted in the formation of anatase phase, and a phase transformation to rutile was observed at 1073 K.An increase in grain size and an improvement in crystallinity were also observed on annealing. Rod- like rutile crystallites were observed in the SEM images of the film annealed at 1273 K. As-deposited films and films annealed up to 1073 K were highly transparent in the visible region with a transparency 480%. Optical band gap of the films decreased upon thermal annealing which is attributed to phase transformation from amorphous to anatase and then to rutile. Optical parameters such as refractive index, optical conductivity and optical dielectric constant increased with increase in annealing temperature. Since rutile is the optically active phase, the superior refractive index of the film annealed at 1073 K along with its high transparency in visible region suggests the application of this film in antireflective coatings. Photoluminescence emission of maximum intensity was observed for the film annealed at 873 K, which exhibits anatase phase. Intense blue emission observed in this film makes it suitable for use in optoelectronic display devices.Prabitha B.Nair V.B.Justinvictor Georgi P.Daniel K.Joy K.C.James Raju David Devraj Kumar P.V.Thomas 2014Progress in Natural Science:Materials International2014,24,3:1
2用于高速A/D转换器的GaAs HJBT和硅双极工艺的比较显示文摘本文研究了在全并行A/D转换器领域中GaAlAs/GaAs异质结双极晶体管(HJBT)工艺的应用前景。为了预测HJBT的前景,与用现代硅工艺可达到的最好性能水平进行了比较。用每一种工艺研制了最佳的锁存比较器,并且进行了SPICE模拟,以便决定其能达到的最大采样率和大信号模拟带宽。在我们进行上述两种工艺的比较时,有这样的一些工艺模式可选用,一种是近期开发阶段的标准的1μm双极工艺与4μmHJBT工艺;另一种是早期开发阶段改进的1μm硅双极工艺与2.5μmHJBT工艺。这样使得随时间流逝的性能改善趋势亦可进行比较。Andrew K.Joy 肖辉杨 1989微电子学1989,19,6:0
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