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3篇 您的检索式:作者名="K.H.Kim"
    题名 作者 年代 出处 被引量
1Deformation heterogeneity of Ti under cryogenic channel-die compressionK.H.KIM S.K.HWANG 2011Progress in Natural Science:Materials International2011,21,4:2
2Microstructure and properties of hot extruded AZ31-0.25%Sb Mg-alloy显示文摘The effects of hot extrusion treatment on the microstructure and mechanical properties of AZ31-0.25%Sb Mg alloy were investigated by means of mechanical properties measurement and microstructure observation.The results show that the microstructure of AZ31-0.25%Sb Mg alloys consists ofα-Ms matrix,Mg_(17)Al_(12) and Mg_3Sb_2 phases.The ultimate tensile strength (UTS) and yield tensile strength(YTS) of the alloy are obviously enhanced by hot extrusion treatment,and the enhanced extent of UTS and YTS increases with the decrease of hot extrusion temperature,moreover,the YTS value of the alloy at RT,after extruded at 220℃,increases up to 131.4%,which attributes to the finer grains resulted from the dynamic recrystallization occurred during hot extrusion.As hot extrusion goes on,the slipping and concentration of dislocations continue to occur within the finer grains,which promotes the formation of the subgrains in the alloy.The deformation features of the extruded alloy during tensile deformation at RT are the twinning deformation and dislocation slipping in the twinning regions.Moreover,the deformation mechanisms of the alloy are a dislocation activation on the basal plane and a+c dislocation activation on the pyramidal planes.田素贵 王岭 K.Y.SHON K.H.KIM 2008中国有色金属学会会刊:英文版2008,18,A01:0
3Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys显示文摘Time-resolved photoluminescence (PL) spectroscopy has be used to investigate indium-rich InGaN Mloys grown on sapphire substrates by metal organic chemical vapor deposition. Photoluminescence measurement indicates two dominant emission lines originating from phase-separated high- and low-indium-content regions. Temperature and excitation intensity dependence of the two main emission lines in these InGaN alloys have been measured.Temperature and energy dependence of PL decay lifetime show clearly different decay behaviour for the two main lines. Our results show that photo-excited carriers are deeply localized in the high indium regions while photo-excited carriers can be transferred within the low-indium-content regions as well as to high-content regions.陈光德 竹有章 颜国君 苑进社 K.H.Kim J.Y.Lin H.X.Jiang 2005Chinese Physics Letters2005,22,2:0
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