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| 1 | Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors显示文摘We present a generic approximate graphical method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other. Simple and easy-to-follow procedures of the graphical method are described.By graphically plotting two wrapping step functions facing each other,one for the positive hole-ionized donor and one for the negative electron-ionized acceptor,we have the crossing point that renders the Fermi level and majority carrier density.Using the graphical method,new equations are derived,such as the carrier compensation proportional to N_A/N_D,not the widely quoted N_A-N_D.Visual insight is offered to view not only the result of graphic determination of Fermi level and majority carrier density but also the dominant and critical pair of donors and acceptors in compensation.The graphical method presented in this work will help to guide the design,adjustment,and improvement of the multiply doped semiconductors.Comparison of this approximate graphical method with previous work on compensation,and with some experimental results,is made.Future work in the field is proposed. | Ken K.Chin | 2011 | Journal of Semiconductors2011，32，6： | 2 |
| 2 | Transition Gibbs free energy level cross section and formulation of carrier SRH recombination rate显示文摘The transition among multiple charging states of a semiconductor's localized intrinsic/impurity defects is considered as phase transitions,and the concept of transition Gibbs free energy level(TGFEL) is proposed.Dependence of the cross section of TGFEL on its charge state is discussed.Introduction of TGFEL to replace activation energy has fundamentally important consequences for semiconductor physics and devices.TGFEL involves entropy.What is to be included and not included in the entropy term consistently for all defect levels is an unresolved open question,related to correct interpretation of various experimental data associated with various defect levels.This work is a first step towards resolving this question. | Ken K.Chin | 2013 | Journal of Semiconductors2013，34，12： | 1 |
| 3 | Local charge neutrality condition,Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects显示文摘For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated, that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work. | Ken K.Chin | 2011 | Journal of Semiconductors2011，32，11： | 1 |
| 4 | Atopic features of cough variant asthma and classic asthma with wheezing显示文摘 | M.Takemura A.Niimi H.Matsumoto T.Ueda M.Yamaguchi H.Matsuoka M.Jinnai K.Chin M.Mishima | 2007 | Clinical & Experimental Allergy2007，，12： | 1 |
| 5 | Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling显示文摘The widely used deep level transient spectroscopy(DLTS) theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling(DLTSDP) is proposed. Based on the relationship of its transition free energy level(TFEL) and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory. | Ken K.Chin Zimeng Cheng | 2016 | Journal of Semiconductors2016，37，9： | 0 |
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