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您的检索式：作者名="Jan Mulkens"
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| 1 | 采用双扫描平台技术的ArF浸液式光刻显示文摘在193nm光刻中,已证明水是一种适于浸液式光刻的液体。浸液式光刻提出了一种可将传统的光学光刻拓展到45nm节点,甚至到32nm节点的潜能。另外,利用现有的透镜,浸液式光刻的选择提出了根据实际的数值孔径和特征图形可增大50%及更大的焦深范围。讨论了采用浸液式光刻获得的成像结果和套刻结果。采用一个0.75数值孔径的ArF透镜,我们用双扫描平台技术(TWINSCANTM)组装一台浸液式扫描光刻机的原理型样机。最初的浸液式曝光实验数据证明了焦深的增加较大,同时以高扫描速度保持了图像的对比度。在初期引入的生产型浸液式光刻中,将采用一个0.85数值孔径的ArF透镜。该系统的分辨率将以大于0.5μm的焦深有效地支持65nm节点半导体器件的加工。这种系统初始的成像技术数据证实有效的增大了其焦深范围。 | Jan Mulkens Bob Streefkerk Martin Hoogendorp 童志义 | 2005 | 电子工业专用设备2005，34，2： | 2 |
| 2 | Benefits and limitations of immersion lithography显示文摘 | Flagello D G Streefkerk B | 2004 | JM3-Journal of Microlithography Microfabrication and Microsystems2004，3，1： | 1 |
| 3 | Benefits and limitations of immersion lithography显示文摘 | Jan Mulkens | 2004 | JM3 - Journal of Microlithography Microfabrication and Microsystems2004，03，01： | 1 |
| 4 | 改进缺陷,套刻和聚焦性能的第五世代浸没式曝光系统(英文)显示文摘论述了第五世代双扫描平台浸液式扫描曝光机的性能和进展。表明了在高速扫描状态下有生产价值的套刻和聚焦性能的实现。浸液式设备更多的关键部分与缺陷有关,而且该机的改进是通过有生产价值的缺陷水平方面来体现的。为了保持这种缺陷水平的改进效果,需要在圆片应用中进行专门稳定的测量。特加是边缘空泡除去(EBR)设计和圆片斜面良流线性是很重要的。 | Jan Mulkens Bob Streefkerk Hans Jasper Jos de Klerk Fred de Jong Leon Levasier Martijn Leenders | 2008 | 电子工业专用设备2008，37，3： | 0 |
| 5 | 应用TWINSCAN平台的ArF浸没式工艺(英文)显示文摘For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens,we have built a proto-type immersion scanner using TWINSCANTM technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF),while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window. | Jan Mulkens Bob Streefkerk Martin Hoogendorp | 2005 | 集成电路应用2005，22，1： | 0 |
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