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1篇 您的检索式：作者名="Henri Chevrel"

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		题名	作者	年代	出处	被引量
	1	Plasma-enhanced atomic layer deposition of Co using Co(MeCp)_2 precursor显示文摘Cobalt(Co) thermal or plasma enhanced atomic layer deposition(PE-ALD) was investigated using a novel metal organic precursor,Co(MeCp)2, and NH3 or H2 or their plasma as a reactant.The growth characteristics,electrical and microstructural properties were investigated.Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃.Interestingly,the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃.The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(Ⅱ)(Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt(II)(CoCP2) and cyclopentadienyl isopropyl acetarrudinato-cobalt(Co(CpAMD)).	Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim	2013	Journal of Energy Chemistry2013，22，3：	3

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