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| 1 | Nickel(Ⅱ) removal from water using silica-based hybrid adsorbents:Fabrication and adsorption kinetics显示文摘A series of novel silica-based hybrid adsorbents were prepared by the crosslinking reaction of N-[3-(trimethoxysilyl)propyl] ethylene diamine(TMSPEDA) with epichlorohydrin(ECH) via a sol–gel process.Fourier transform infrared(FTIR) spectra confirmed that the reaction occurred.TGA curves showed that the thermal stability of these hybrid adsorbents reached as high as 180 °C.As a typical example,the adsorption performance of nickel(II) ions onto an adsorbent(the volume ratio of TMSPEDA and ECH was 4:1) was explored.It was found that the adsorption of nickel(II) ions onto this adsorbent followed the Lagergren pseudo-second-order kinetic model.The investigation of the adsorption mechanism demonstrated that nickel(II) adsorption was chiefly controlled by diffusion–chemisorption,suggesting that more diffusion processes were involved in the adsorption of nickel(II) ions onto this type of adsorbents.Desorption experiment indicates that these hybrid adsorbents can be regenerated.These findings reveal that this type of silica-based hybrid adsorbent is promising in the separation and recovery of nickel(II) ions from Ni-containing wastewater or contaminated water. | Min Xu Junsheng Liu Keyan Hu Congyong Xu Yaoyao Fang | 2016 | Chinese Journal of Chemical Engineering2016，24，10： | 1 |
| 2 | 显示文摘 | | 2004 | Journal of Applied Polymer Science2004，91，1： | 1 |
| 3 | Reducing Packing Factor of Znln2S4 to Promote Photocatalytic Activity显示文摘Due to the quite sluggish charge-carrier separation in semiconductor photocatalysts,the photocatalytic ac-tivity of these materials is still far inferior than anticipated.Herein,a novel approach to reducing the packing factor(PF)of Znln2S4 semiconductors to improve the charge-carrier separation is offered.The well-crystallized Zn1-xIn2S4-x(x=0,0.05,0.1)powders were productively prepared through solid-state reactions.Their structures were verified by the high-resolution transmission electron microscopy,powder X-ray diffraction,and X-ray photoelectron spectroscopy.The PE values of Zn1-xIn2S4-x(x=0,0.05,0.1)samples were calculated to be 0.683.0.651.and 0.618.respectively.The reduction.of the PF for Zn1-xIn2S4-x with increasing x can promote the separation of photoexcited carriers,and this process was endorsed by their photoelectric response and photoluminescence emission spectra.The Zn0.9In2S3.9 sample with a lower PF value presents roughly 21 times higher photocurrent density and four times higher photodegrading rate of methyl orange than those of pristine ZnIn2S4. | HU Keyan XU Zian LIU Yiting HUANG Fuqiang | 2020 | Chemical Research in Chinese Universities2020，36，6： | 0 |
| 4 | Introducing sulfur vacancies and in-plane SnS_(2)/SnO_(2) heterojunction in SnS_(2) nanosheets to promote photocatalytic activity显示文摘Due to the relatively sluggish charge carrier separation in metal sulfides,the photocatalytic activity of them is still far lower than expected.Herein,sulfur vacancies and in-plane SnS_(2)/SnO_(2) heterojunction were successfully introduced into the SnS_(2) nanosheets through high energy ball-milling.These defective structures were studied by the electron paramagnetic resonance,Raman spectra,X-ray photoelectron spectroscopy,and high-resolution transmission electron microscope analyses.The sulfur vacancies and in-plane heterojunctions strongly accelerate the separation of photoexcited electron-hole pairs,as confirmed by the photo luminesce nce emission spectra and time-resolved photoluminescence decay spectra.The introduction of sulfur vacancies and in-plane heterojunction in SnS_(2) nanosheets results in roughly six times higher photodegrading rate for methyl orange and four times higher photocatalytic reduction rate of Cr6+than those of pure SnS_(2) nanosheets. | Keyan Hu Chen Ming Yiting Liu Chong Zheng Shaoning Zhang Dong Wang Wei Zhao Fuqiang Huang | 2020 | Chinese Chemical Letters2020，31，10： | 0 |
| 5 | Composite structure of ZnO films coated with reduced graphene oxide: structural,electrical and electrochemical properties显示文摘ZnO films coated with reduced graphene oxide(RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide(GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps(exposed to hydrazine vapor for 12 h and annealed at 600 °C). The crystal structures, electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied. The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly. The PL properties of RGO-ZnO were studied. PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm.The resistivity of RGO-ZnO films was measured by a Hall measurement system, RGO as nanofiller considerably decrease the resistivity of ZnO films. An electrode was fabricated, using RGO-ZnO films deposited on Si substrate as active materials, for super capacitor application. By comparison of different results, we conclude that the RGOZnO composite material couples possess the properties of super capacitor. | Weiqiang Shuai Yuehui Hu Yichuan Chen Keyan Hu Xiaohua Zhang Wenjun Zhu Fan Tong Zixuan Lao | 2018 | Journal of Semiconductors2018，39，2： | 0 |
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