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14篇 您的检索式:作者名="HONGSITH"
    题名 作者 年代 出处 被引量
1AZO/Ag/AZO multilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application 显示文摘SUTTHANA S HONGSITH N CHOOPUN S 2010Current Applied Physics2010,10,:1
2AZO/Ag/AZO multilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application显示文摘Sutthana S Hongsith N Choopun S 0,,03:1
3Ethanol sensor based on ZnO and Au-doped ZnO nanowires 显示文摘Hongsith N Viriyaworasakul C Mangkorntong P 2008Ceramics International2008,34,:1
4Sensor Response Formula for Sensor Based on ZnO Nanostructures 显示文摘HONGSITH N WONGRAT E KERDCHAROEN T 2010Sens Actuators B2010,144,1:1
5显示文摘Choopun S Hongsith N 2007Physica E2007,39,1:1
6Single-crystalline ZnO nanobelts by RF sputtering显示文摘Choopun S Hongsith N Tanunchai S 0,,3:1
7AZO/Ag/AZO multi- layer films prepared by DC magnetron sputtering for dye- sensitized solar cell application 显示文摘Sutthana S Hongsith N Ch S 2010Current Applied Physics2010,10,:1
8Zinc Oxide Nanobelts by RF Sputtering for Ethanol Sensor 显示文摘Choopun S Hongsith N Mangkorntong P 2007Physica E: Low-dimensional Systems and Nanostructures2007,39,1:1
9Ethanol sensor based on ZnO and Au-doped ZnO nanowires显示文摘HONGSITH N VIRIYAWORASAKUL C MANGKORNTONG P 0,,04:1
10Ethanol sensor based on ZnO and Au-doped ZnO nanowires显示文摘Hongsith N Viriyaworasakul C Mangkorntong P 2007Ceramics International2007,33,9:1
11显示文摘Hongsith N Viriyaworasakul C Mangkomtong P 2008Ceram Int2008,34,:1
12Sensor Response Formula for Sensor Based on ZnO Nanostructures显示文摘HONGSITH N WONGRAT E KERDCHAROEN T 2010Sensors and Actuators B2010,144,1:1
13Realization of Interlinked ZnO tetrapod networks for UVsensor and room-temperature gas sensor显示文摘THEPNURAT M CHAIRUANGSRI T HONGSITH N etal 2015Applied Ma-terials & Interfaces2015,7,43:1
14Efficiency enhancement of Cs_(0.1)(CH_(3)NH_(3))_(0.9)PbI_(3) perovskite solar cell by surface passivation using iso-butyl ammonium iodide显示文摘Efficiency enhancement of Cs_(0.1)(CH_(3)NH_(3))_(0.9)PbI_(3) solar cell devices was performed by using iso-butyl ammonium iodide(IBA)passivated on Cs_(0.1)(CH_(3)NH_(3))_(0.9)PbI_(3) films.The n-i-p structure of perovskite solar cell devices was fabricated with the structure of FTO/SnO_(2)/Cs_(0.1)(CH_(3)NH_(3))_(0.9)PbI_(3)(FTO,i.e.,fluorine doped tin oxide)and IBA/Spiro-OMeTAD/Ag.The effect of different weights of IBA passivated on Cs-doped perovskite solar cells(PSCs)was systematically investigated and compared with non-passivated devices.It was found that the 5-mg IBA-passivated devices exhibited a high power conversion efficiency(PCE)of 15.49%higher than 12.64%of non-IBA-passivated devices.The improvement of photovoltaic parameters of the 5-mg IBA-passivated device can be clearly observed compared to the Cs-doped device.The better performance of the IBA-passivated device can be confirmed by the reduction of PbI_(2) phase in the crystal structure,lower charge recombination rate,lower charge transfer resistance,and improved contact angle of perovskite films.Therefore,IBA passivation on Cs_(0.1)(CH_(3)NH)_(0.9)PbI_(3) is a promising technique to improve the efficiency of Cs-doped perovskite solar cells.Wakul Bumrungsan Kritsada Hongsith Vasan Yarangsi Pisith Kumnorkeaw Sukrit Sucharitakul Surachet Phaduangdhitidhada Supab Choopun 2022International Journal of Minerals,Metallurgy and Materials2022,29,11:0
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