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3篇 您的检索式：作者名="H.D.Yang"

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		题名	作者	年代	出处	被引量
	1	A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions显示文摘有层的 Nano-ring-type 磁性的隧道连接( NR-MTJs )组织 ofTa ( 5 )/Ir_( 22 )Mn_( 78 )( 10 )/Co_( 75 )Fe_( 25 )( 2 ) /Ru ( 0.75 )/Co_( 60 )Fe_( 20 )B_( 20 )( 3 ) /AI ( 0.6 ) -oxide/Co_(60)Fe_(20)B_(20)(2.5)/Ta(3)/Ru(5)(thickness unit:nm )在磁控管劈啪作响免职与光平版印刷术,电子 beamlithography ( EBL )和蚀刻 techniques.The 的 Ar 离子横梁相结合的 Si ( 100 ) /SiO2 substrateusing 上是制作nano 的有约 50 和 100 nm 并且也的 inner-andouter-diameter 的更小的 NR-MTJs 他们的	X.F.Han H.X.Wei Z.L.Peng H.D.Yang J.F.Feng G.X.Du Z.B.Sun L.X.Jiang Q.H.Qin M.Ma Y.Wang Z.C.Wen D.P.Liu W.S.Zhan State	2007	Journal of Materials Science & Technology2007，23，3：	4
	2	On the formation of shear bands in a metallic glass under tailored complex stress fields显示文摘The formation of shear bands in metallic glasses(MGs)was examined by tailoring localized complex stress fields(LCSFs).The findings have shown that the LCSFs in MGs can increase the localization of strained atoms and accelerate the release of accumulated deformation energy for initiating a shear band in confined and thin-layered regions.The findings not only add more knowledge to the formation mechanisms of shear bands in MGs,but also provide possible rationale for the discrepancies in the mechanical properties of different-sized MGs.As compared with the bulk samples,the higher strength and larger elastic limits in nanoscaled MGs could be attributed to the elimination of stress-concentrators,which can serve as LCSFs.	S.H.Chen T.Li W.J.Chang H.D.Yang J.C.Zhang H.H.Tang S.D.Feng F.F.Wu Y.C Wu	2020	Journal of Materials Science & Technology2020，52，18：	1
	3	STRUCTURAL PROPERTIES INVESTIGATION ON MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE显示文摘Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microc rystalline silicon (μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical v apor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si : H films ar e strongly affected by the two deposition conditions and are more sensitive to w orking gas pressure than VHF plasma power. SEM characterizations have further co nfirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of μc-Si : H films ascribing to polymerization reactions, w hich is also more sensitive to working gas pressure than VHF plasma power.	H.D.Yang	2005	Acta Metallurgica Sinica(English Letters)2005，18，3：	0

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