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9篇 您的检索式：作者名="Guerber"

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		题名	作者	年代	出处	被引量
	1	A fully nonlinear implicit model for wave interactions with submergedstructures in forced or free motion显示文摘	Guerber E Benoit M Grilli ST Buvat C		0，，：	1
	2	Merged capacitor switching based SAR ADC with highest switching energy-efficiency显示文摘	HARIPRASATH V GUERBER J LEE S	2010	Elec Lett2010，46，9：	1
	3	Bacteriological Diagnosis of Streptococcus suis Meningitis显示文摘	F. Durand C. L. Périno C. Recule J. P. Brion M. Kobish F. Guerber J. Croizé	2001	European Journal of Clinical Microbiology and Infectious Diseases2001，，7：	1
	4	Merged capacitor switching based SAR ADC with highest switching energy-efficiency 显示文摘	HARIPRASATH V GUERBER J LEE S H	2010	Elec Lett2010，46，9：	1
	5	Mergedcapacitor switching based SAR ADC with highest switching energy-efficiency 显示文摘	Hariprasath V Guerber J Lee S H	2010	Electronics Letters (S0013-5194)2010，46，9：	1
	6	Frequency of CoUetotrichum species causing bitter rot of apples in the southeastern Unites States显示文摘	Shi Y Correll J C Guerber J C	1996	Plant Dis1996，，80：	1
	7	A 10-b ternary SAR ADC with quantization time information utilization显示文摘	Guerber J Venkatram H Gande M etal	2012	IEEE Journal of Solid-State Circuits2012，47，11：	1
	8	Merged capacitor switching based SAR ADC with highest switching energy-efficiency显示文摘	HARIPRASATH V GUERBER J LEE S H	2010	Electronics Letters2010，46，9：	1
	9	Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform显示文摘We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were obtained.Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.	CHRISTIAN LAFFORGUE SYLVAIN GUERBER JOAN MANEL RAMIREZ GUILLAUME MARCAUD CARLOS ALONSO-RAMOS XAVIER LE ROUX DELPHINE MARRIS-MORINI ERIC CASSAN CHARLES BAUDOT FRéDéRIC BOEUF SéBASTIEN CREMER STéPHANE MONFRAY LAURENT VIVIEN	2020	Photonics Research2020，8，3：	0

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