7篇
您的检索式：作者名="Gary Hodes"
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| 1 | High Open-Circuit Voltage Solar Cells Based on Organic Inorganic ~ Bromide Perovskite显示文摘 | Eran Edri David Caben Gary Hodes | 2013 | J Phys Chem Lett2013，，4： | 1 |
| 2 | Stability of CdTe/CdS Thin-film Solar Cells显示文摘 | Kevin D Dobson Iris Visoly-fisher Gary Hodes | 2000 | Solar Energy Materials & Solar Cells2000，62，29： | 1 |
| 3 | Cahen, David, Perovskite cens roll forward 显示文摘 | Hodes Gary | 2014 | Nature Photonics2014，，8： | 1 |
| 4 | Numerical analysis of aqueous polysufide solutions and its application to cadmium chalcogenide/polysulfide photoelectrochemical solar ceUs显示文摘 | Stuart Licht Gary Hodes Joost Manassen | 1986 | Inorg Chem1986，25，15： | 1 |
| 5 | Perovskite-Based Solar Cells显示文摘 | Gary Hodes | 2013 | Science2013，，6156： | 1 |
| 6 | Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites显示文摘We report a novel Mn-Co-Ni-O(MCN)nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene.With an increase of graphene content,the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type.The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN,neutralizing holes in the MCN nanoparticles.XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states.Unlike traditional semiconductor devices,electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN.The new composite film demonstrates inherent flexibility,high mobility,short carrier lifetime,and high carrier concentration.This work is useful not only in manufacturing flexible transistors,FETs,and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors. | Lihong Su Zhou Yang Xitong Wang Ziao Zou Bo Wang Gary Hodes Ninghui Chang Yongyong Suo Zhibo Ma Haoxu Wang Yucheng Liu Junping Zhang Shuanhu Wang Yuefei Li Fengxia Yang Jixin Zhu Fei Gao Wei Huang Shengzhong Liu | 2022 | Research2022，，1： | 0 |
| 7 | Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites显示文摘We report a novel Mn-Co-Ni-O(MCN)nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene.With an increase of graphene content,the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type.The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN,neutralizing holes in the MCN nanoparticles.XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states.Unlike traditional semiconductor devices,electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN.The new composite film demonstrates inherent flexibility,high mobility,short carrier lifetime,and high carrier concentration.This work is useful not only in manufacturing flexible transistors,FETs,and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors. | Lihong Su Zhou Yang Xitong Wang Ziao Zou Bo Wang Gary Hodes Ninghui Chang Yongyong Suo Zhibo Ma Haoxu Wang Yucheng Liu Junping Zhang Shuanhu Wang Yuefei Li Fengxia Yang Jixin Zhu Fei Gao Wei Huang Shengzhong Liu | 2021 | Research2021，，1： | 0 |
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