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1篇 您的检索式：作者名="Gaoting Lin"

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		题名	作者	年代	出处	被引量
	1	Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6显示文摘Cr_2Ge_2Te_6is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure,thus represents a promising material for novel electronic and spintronic devices.Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr_2Ge_2Te_6.Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition,as well as a peculiar double-peak electronic state on the Cr-site defect.These features can be quantitatively explained by density functional theory calculations,which uncover a close relationship between the electronic structure and magnetic order.These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr_2Ge_2Te_6.	Zhenqi Hao Haiwei Li Shunhong Zhang Xintong Li Gaoting Lin Xuan Luo Yuping Sun Zheng Liu Yayu Wang	2018	Science Bulletin2018，63，13：	1

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