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26篇 您的检索式：作者名="GASKA R"

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	题名	作者	年代	出处	被引量
1	Avalanche breakdown and breakdown luminescence in pn-n GaN diodes显示文摘	A Osinsky M S Shur R Gaska	1998	Electronic Letters1998，34，：	1
2	GaN-based electronic devices 显示文摘	Shur MS Gaska R Bykhovski A	1999	Solid-state Electronics1999，43，：	1
3	White complementary solid-state lamp 显示文摘	ZUKAUSKAS A GASKA R SHUR M S	2004	Leukos2004，1，1：	1
4	Self-heating in high-power AIGaN-GaN HFET's显示文摘	GASKA R OSINSKY A YANG J W	1998	IEEE Electron Device Letters1998，19，3：	1
5	Electron transport in A1GaN - GaN heterostructures grown on 6H - SiC substrates显示文摘	Gaska R Yang J W Osinsky A	1998	Appl Phys Lett1998，72，：	1
6	Simulation of gate lag and current collapse in gallium nitride field-effect transistors显示文摘	BRAGA N MICKEVICIUS R GASKA R	2004	Appl Phys Lett2004，85，：	1
7	Finite-temperature band gap renormalization in highly photoexcited GaN? epilayers显示文摘	Zukauskas A Jursenas S Kurilcik G Tamulaitis G Shur M S Gaska R Yang J W Khan M A	1999	Phys Stat Sol B1999，216，：	1
8	Two-dimensional hole gas induced by piezoelectric and pyroelectric charges显示文摘	Shur M S Bykhovski A D Gaska R	2000	Solid-state Electronics2000，44，：	1
9	Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride 显示文摘	BU G CIPLYS D SHUR M SCHOWALTER L J SCHUJMAN S GASKA R	2004	Appl Phys Lett2004，84，：	1
10	Self-heating in high-power AlGaN-GaN HFET's显示文摘	Gaska R Osinsky A Yang J W	1998	IEEE Electron Device Lett1998，，：	1
11	Self heating in high power A1GaN/GaN HFETs显示文摘	Gaska R Osinsky A Yang J W	1998	IEEE Electron Device Letter1998，19，3：	1
12	GaN- based electronic device显示文摘	SHUR M S GASKA R BYKHOVSKI A	1999	Solid State Electron1999，43，8：	1
13	Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostrueture field effect transistors 显示文摘	BYKHOVSKI A D GASKA R SHUR M S	1998	Appl Phys Lett1998，73，24：	1
14	Deep-ultraviolet light-emitting diodes显示文摘	Shur M S Gaska R	2010	Electron Devices IEEE Transactions on2010，57，1：	1
15	Low-frequency noise in AIGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates显示文摘	Rumyantsev S Levinshtein M E Gaska R	2000	J Appl Phys2000，87，4：	1
16	Transient processes in AlGaN/GaN heterostructure field effect transistors显示文摘	Rumyantsev S L Shur M S Gaska R	2000	Electron Lett2000，36，8：	1
17	Electron mobility in modulation-doped AlGaN-GaN heterostructures显示文摘	Gaska R Shur M S Bykhovski A D	1999	Appl Phys Lett1999，74，20：	1
18	The influence of the deformation on the two- dimensional electron gas density in GaN-AlGaN heterostructures显示文摘	GASKA R YANG J W BYKHOVSKI A D	1998	Appl Phys Lett1998，72，1：	1
19	Electron Mobility in Modulation-doped AlGaN-GaN Heterostructures显示文摘	Gaska R Shur M S Bykhovski A D	1999	Appl Phys Lett1999，74，2：	1
20	Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistor显示文摘	BRAGA N MICKEVICIUS M GASKA R	2004	Appl Pbys2004，95，11：	1

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