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51篇 您的检索式：作者名="Funakubo H"

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	题名	作者	年代	出处	被引量
1	Fatigue -free RuO2/Pb(Zr,Ti) O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395 ℃显示文摘	Asano G Morioka H Funakubo H	2003	Appl Phys Lett2003，83，26：	1
2	Polarized Raman scattering of multiferroic BiFeO3 thin films with pseudo tetragonal symmetry 显示文摘	SINGH S K KIM Y K FUNAKUBO H	2006	Appl Phys Lett2006，88，16：	1
3	Ferroelectric property of epitaxial Bi 4Ti 3O12 films prepared by metalorganic chemical vapor deposition显示文摘	WATANABE T FUNAKUBO H SAITO K	2001	J Mater Rev2001，16，1：	1
4	Growth of epitaxial PLZT by CVD显示文摘	Funakubo H Imashita K	1991	J Ceram Soc Jpn1991，99，11：	1
5	(11l)-textured Mn-substituted BiFe03 thin films on SrRu03/PtiTi/Si02/Si structures 显示文摘	SINGH S K MENOU N FUNAKUBO H MARUYAMA K ISHIWARA H	2007	Appl Phys Lett2007，90，：	1
6	Development of a microsurgical robot for stereotactic neurosurgery显示文摘	Koyama H Uchida T Funakubo H	1990	Stereotact Funct Neurosurg1990，55，：	1
7	Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd^3+N^5+ cosubstitution 显示文摘	UCHIDA H YOSHIKAWA H OKADA I MATSUDA H IIJIMA T WATANABE T KOJIMA T FUNAKUBO H	2002	Appl Phys Lett2002，81，12：	1
8	Large remanent polarization of Bi4Ti3012 -based thin films modified by the site engineering technique显示文摘	Watanabe T Kojima T Sakai T Funakubo H Osada M	2002	Journal of Applied Physics2002，92，：	1
9	Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition显示文摘	WATANABE T FUNAKUBO H OSADA M	2002	Appl Phys Lett2002，80，1：	1
10	Crystal structure and ferroelectric properties of rare-earth substi- tuted BiFeO3 thin films 显示文摘	UCHIDA H UENO R FUNAKUBO H	2006	Journal of Applied Phys- ics2006，100，01：	1
11	(111)-textured Mnsubstituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures显示文摘	Singh S Menou N Funakubo H	2007	Appl Phys Lett2007，90，24：	1
12	Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3 ~/V5 ~ cosubstitution显示文摘	Uchida H Yoshikawa H Okada I Matsuda H Watanabe T Kojima T Funakubo H	2002	Applied Physics Letters2002，81，：	1
13	显示文摘	Menou N Funakubo H	2007	J Appl Phys2007，102，11：	1
14	Epitaxial BiFeO3 thin films fabricated by chemical solution deposition显示文摘	Singh S K Kim Y K Funakubo H	2006	Appl Phys Lett2006，88，16：	1
15	Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films显示文摘	Uchida H Ueno R Funakubo H	2006	J Appl Phys2006，100，01：	1
16	Phase diagram andmicrostructure in the ZnO-Pr2O3 system显示文摘	CHUN S Y WAKIYA N FUNAKUBO H	1997	J Am Ceram Soc1997，80，4：	1
17	(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2 / Si structures显示文摘	Singh S K Menou N Funakubo H	2007	Appl Phys Lett2007，90，24：	1
18	Ferroelctric properties of lanthanlde-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition显示文摘	Kojima T Watanabe T Funakubo H	2003	J Appl Phys2003，93，：	1
19	Microsensor for the measurement of water content in the human skin显示文摘	Sekiguchi N Komeda T Funakubo H	2001	Sensors and Actuators B2001，78，13：	1
20	Fatigue-free RuO2/Pb (Zr, Ti ) O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395℃ 显示文摘	ASANO G MORIOKA H FUNAKUBO H SHIBUTAMI T OSHIMA N	2003	Applied Physics Letters2003，83，26：	1

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