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| 1 | Foveated glasses-free 3D display with ultrawide field of view via a large-scale 2D-metagrating complex显示文摘Glasses-free three-dimensional(3D)displays are one of the game-changing technologies that will redefine the display industry in portable electronic devices.However,because of the limited resolution in state-of-the-art display panels,current 3D displays suffer from a critical trade-off among the spatial resolution,angular resolution,and viewing angle.Inspired by the so-called spatially variant resolution imaging found in vertebrate eyes,we propose 3D display with spatially variant information density.Stereoscopic experiences with smooth motion parallax are maintained at the central view,while the viewing angle is enlarged at the periphery view.It is enabled by a large-scale 2D-metagrating complex to manipulate dot/linear/rectangular hybrid shaped views.Furthermore,a video rate full-color 3D display with an unprecedented 160°horizontal viewing angle is demonstrated.With thin and light form factors,the proposed 3D system can be integrated with off-the-shelf purchased flat panels,making it promising for applications in portable electronics. | Jianyu Hua Erkai Hua Fengbin Zhou Jiacheng Shi Chinhua Wang Huigao Duan Yueqiang Hu Wen Qiao Linsen Chen | 2021 | Light(Science & Applications)2021，10，11： | 14 |
| 2 | Sunway supercomputer architecture towards exascale computing:analysis and practice显示文摘In recent years,the improvements of system performance and energy efficiency for supercomputers have faced increasing challenges,which create more intensive demands on the architecture design for realizing exascale computing.This paper first analyzes the main requirements of exascale computing on the aspects of the parallel computing application and supercomputing center operation.Afterwards,a mapping scheme of'demands-challenges-architecture'is proposed.Then,the major challenges of exascale supercomputer,such as scalability,power consumption,data movement,programming and availability,are thoroughly analyzed,and the corresponding appropriate solutions are proposed.Moreover,this paper proposes the Sunway computer architecture towards exascale computing in which the many-core processor,network chipset and software system are all domestically-designed.The technology roadmap of Sunway supercomputer will hold the comprehensive design methods for the architecture,including the processor,interconnect network,assembly structure,power supply,cooling system,system software,parallel algorithm and application support,promising great advances for exascale supercomputing. | Jiangang GAO Fang ZHENG Fengbin QI Yajun DING Hongliang LI Hongsheng LU Wangquan HE Hongmei WEI Lifeng JIN Xin LIU Daoyong GONG Fei WANG Yan ZHENG Honghui SUN Zhou ZHOU Yong LIU Hongtao YOU | 2021 | Science China(Information Sciences)2021，64，4： | 3 |
| 3 | Electronic Structure and Physical Characteristics of Dioxin Under External Electric Field显示文摘Dioxin is a highly toxic and caustic substance,which widely existed in the atmosphere,soil and water with tiny particles.Dioxin pollution has become a major problem that concerns the survival of mankind,which must be strictly controlled.The bond length,bond angle,energy,dipole moment,orbital energy level distribution of dioxin under the external field are investigated using DFT(density functional theory)on basis set level of B3LYP/6-31G(d,p).The results indicate that with the increase of the electric field,the length of one Carbon-Oxygen bond increases while another Carbon-Oxygen bond decreases.The energy gradually decreases with the electric field,while the change of the dipole moment has an opposite trend.In the infrared spectra,the vibration frequency decreases with the electric field increasing and shows an obvious red shift.Moreover,the ultraviolet-visible absorption spectra under different electric fields are analyzed with TD-DFT(time-dependent density functional theory)method.The wavelength of the strongest absorption peak increases and occurs red shift with the increase of the electric field.All the above results can provide reference for further research on the properties of dioxin under different external electric field. | Wenyi Yin Xiangyun Zhang Bumaliya Abulimiti Yuzhu Liu Yihui Yan Fengbin Zhou Feng Jin | 2018 | Computers, Materials & Continua2018，，4： | 2 |
| 4 | TESTING LINEAR AND NONLINEAR GRANGER CAUSALITY IN CSI300 FUTURES AND SPOT MARKETS BASED ON NEW CONCEPTS OF NONLINEAR POSITIVE/NEGATIVE SPILLOVER显示文摘Hiemstra and Jones(1994) argued that a significant negative value of their nonlinear Granger causality test(H-J test) means there is a confounding effect in the prediction.However,from the theoretical analysis and Monte Carlo simulations,the authors find that H-J test is significantly negative under the circumstance of negative volatility spillover.Furthermore,the authors put forward the conceptions of positive/negative nonlinear spillover,and apply H-J test to examine positive/negative nonlinear spillover effect.The empirical study on China stock futures and spot markets shows that:1) There is significant positive nonlinear spillover from futures to spot market;2) There is significant negative nonlinear spillover from spot to futures market.The authors argue that there is 'risk absorption' mechanism in information spillover from the spot market to the futures market,which is due to the temporal transfer of speculative trading from the analysis. | ZHOU Pu LU Fengbin WANG Shouyang | 2014 | Journal of Systems Science & Complexity2014，27，4： | 2 |
| 5 | A facile approach to the synthesis of highly electroacnve t't nanopar- ticles on graphene as an anode catalyst for direct methanol fuel cells 显示文摘 | ZHOU Yige CHEN Jingjing WANG Fengbin | 2010 | Chem Commun2010，46，32： | 1 |
| 6 | Device performance limit of monolayer SnSe_(2) MOSFET显示文摘Two-dimensional(2D)semiconductors are attractive channels to shrink the scale of field-effect transistors(FETs),and among which the anisotropic one is more advantageous for a higher on-state current(I_(on)).Monolayer(ML)SnSe_(2),as an abundant,economic,nontoxic,and stable two-dimensional material,possesses an anisotropic electronic nature.Herein,we study the device performances of the ML SnSe_(2) metal-oxide-semiconductor FETs(MOSFETs)and deduce their performance limit to an ultrashort gate length(L_(g))and ultralow supply voltage(V_(dd))by using the ab initio quantum transport simulation.An ultrahigh I_(on) of 5,660 and 3,145µA/µm is acquired for the n-type 10-nm-L_(g) ML SnSe_(2) MOSFET at V_(dd)=0.7 V for high-performance(HP)and low-power(LP)applications,respectively.Specifically,until L_(g) scales down to 2 and 3 nm,the MOSFETs(at V_(dd)=0.65 V)surpass I_(on),intrinsic delay time(τ),and power-delay product(PDP)of the International Roadmap for Device and Systems(IRDS,2020 version)for HP and LP devices for the year 2028.Moreover,the 5-nm-L_(g) ML SnSe_(2) MOSFET(at V_(dd)=0.4 V)fulfills the IRDS HP device and the 7-nm-L_(g) MOSFET(at V_(dd)=0.55 V)fulfills the IRDS LP device for the year 2034. | Hong Li Jiakun Liang Qida Wang Fengbin Liu Gang Zhou Tao Qing Shaohua Zhang Jing Lu | 2022 | Nano Research2022，15，3： | 0 |
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