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1篇 您的检索式：作者名="FREOERIC Y.GARDES"

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		题名	作者	年代	出处	被引量
	1	All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor显示文摘In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrating high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrieraccumulation-based devices potentially offer almost an order of magnitude improvement over those based on carrier depletion. Previously reported accumulation modulator designs only considered vertical metal-oxidesemiconductor(MOS) capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, for the first time to our knowledge, we report experimental demonstration of an all-silicon accumulation phase modulator based on a lateral MOS capacitor. Using a Mach–Zehnder interferometer modulator with a 500-μm-long phase shifter, we demonstrate high-speed modulation up to 25 Gbit∕s with a modulation efficiency(V_πL_π) of 1.53 V·cm.	KAPIL DEBNATH DAVID J.THOMSON WEIWEI ZHANG ALI Z.KHOKHAR CALLUM LITTLEJOHNS JAMES BYERS LORENZO MASTRONARDI MUHAMMAD K.HUSAIN KOUTA IBUKURO FREOERIC Y.GARDES GRAHAM T,REED SHINICHI SAITO	2018	Photonics Research2018，6，5：	6

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