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10篇 您的检索式：作者名="FACCIO F"

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		题名	作者	年代	出处	被引量
	1	Radiation-induced edge effects in deep submicmn CMOS transistors显示文摘	Faccio F Cervelli G	2005	Nuclear Science IEEE Transactions on2005，52，6：	1
	2	Computational method to estimate single event upset rates in an accelerator environment 显示文摘	Huhtinen M Faccio F	2000	Nuclear Instruments and Methods in Physics Research A2000，450，：	1
	3	Chest wall invasion in non-small cell lung carcinoma:a rational for en bloc resection显示文摘	Faccio F Cardillo G Lopergo M	2001	Thorac Cardiovasic Surg2001，121，4：	1
	4	Radiation-induced edge effects in deep submicron CMOS transistors 显示文摘	FACCIO F CERVELLI G	2005	IEEE Trans Nucl Sci2005，52，6：	1
	5	Layouttechniques to enhance the radiation tolerance ofstandard CMOS technologies demonstrated on a pixeldetector readout chip 显示文摘	Snoeys W Faccio F Burns M	2000	Nuclear Instruments andMethods in Physics Research Section A: Accelerators Spectrometers Detectors and Associated Equipment2000，439，23：	1
	6	c -Fms and the alphavbeta3 integrin collaborate during osteoclast differentiation显示文摘	Faccio R Takeshita S Zallone A Ross F P Teitelbaum SL		0，，：	1
	7	Dynamic changes in the osteoclast cytoskeleton in response to growth factors and cell attachment are controlled by beta3 integrin显示文摘	Faccio R N ovack D V Zallone A R oss F P T eitelbaum S L		0，，：	1
	8	An embedded system for position and speed measurement adopting incremental encoders显示文摘	FACCIO M GRANDE P PARASILIT F	2008	IEEE Transactions on Industry Applications2008，44，5：	1
	9	Total ionizing dose ef{ects in 130 nm commer- cial CMOS technologies for HEP experiments 显示文摘	GONELLA L FACCIO F SILVESTRI M	2007	Nuclear Instruments and Methods in Phys- ics Research A2007，582，：	1
	10	Radiation-induced edge effects in deep submicron CMOS transistors 显示文摘	FACCIO F CERVELLI G	2005	IEEE Transac-tions on Nuclear Science2005，52，6：	1

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