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| 1 | Energy Dissipation and Transport in Nanoscale Devices显示文摘Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems.This is also a rich domain for fundamental discoveries at the intersection of electron,lattice(phonon),and optical(photon)interactions.This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures.First,the landscape of power usage from nanoscale transistors(~10^(-8) W)to massive data centers(~10^(-9) W)is surveyed.Then,focus is given to energy dissipation in nanoscale circuits,silicon transistors,carbon nanostructures,and semiconductor nanowires.Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times.Finally,recent directions regarding energy transport are reviewed,including electrical and thermal conductivity of nanostructures,thermal rectification,and the role of ubiquitous material interfaces. | Eric Pop | 2010 | Nano Research2010，3，3： | 31 |
| 2 | Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials显示文摘Structural phase-change materials are of great importance for applications in information storage devices.Thermally driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory technologies.However,the waste heat generated by such thermal mechanisms is often not optimized,and could present a limiting factor to widespread use.The potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials,providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy consumption.In this work,we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase transitions.Determining theoretical limits in monolayer MoTe2 and thin films of Ge_(2)Sb_(2)Te_(5),we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge_(2)Sb_(2)Te_(5).Furthermore,experimentally reported phase change energy consumption of Ge_(2)Sb_(2)Te_(5) is 100–10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material,leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge_(2)Sb_(2)Te_(5)-based devices. | Daniel A.Rehn Yao Li Eric Pop Evan J.Reed | 2018 | npj Computational Materials2018，，1： | 0 |
| 3 | SANTA: Self-aligned nanotrench ablation via Joule heating for probing sub-20 nm devices显示文摘在纳米规模操作材料是挑战性的,特别地如果有 nanoscale 电极的排列被需要。这里,我们描述没有平版印刷术的、自我排列的 nanotrench 脱离(圣特) 创造在聚合物的沟 poly 喜欢的 nanoscale (甲基 methacrylate )(PMMA ) 的技术。nanotrenches 与碳 nanotube (CNT ) 是自我排列的或通过加热的简单朱尔的 graphene 带子电极处理。用模拟和实验,我们调查了焦耳力量,周围的温度, PMMA 厚度,和底层性质怎么影响这种技术的空间决定。第一次,我们由降低周围的温度并且减少 PMMA 厚度完成了 sub-20 nm nanotrenches。我们也表明了工作 nanoscale 有一台 CNT 控制设备的抵抗存储器(RRAM ) 位 selfaligned,通过 SANTA 途径完成了。这种技术提供一个漂亮、便宜的方法用自我排列的电极探查 nanoscale 设备,没有常规排列或平版印刷术步骤的使用。 | Feng Xiong Sanchit Deshmukh Sungduk Hong Yuan Dai Ashkan Behnam Feifei Lian Eric Pop | 2016 | Nano Research2016，9，10： | 0 |
| 4 | Field-effect at electrical contacts to two-dimensional materials显示文摘The inferior electrical contact to two-dimensional(2D)materials is a critical challenge for their application in post-silicon very large-scale integrated circuits.Electrical contacts were generally related to their resistive effect,quantified as contact resistance.With a systematic investigation,this work demonstrates a capacitive metal-insulator-semiconductor(MIS)field-effect at the electrical contacts to 2D materials:The field-effect depletes or accumulates charge carriers,redistributes the voltage potential,and gives rise to abnormal current saturation and nonlinearity.On one hand,the current saturation hinders the devices’driving ability,which can be eliminated with carefully engineered contact configurations.On the other hand,by introducing the nonlinearity to monolithic analog artificial neural network circuits,the circuits’perception ability can be significantly enhanced,as evidenced using a coronavirus disease 2019(COVID-19)critical illness prediction model.This work provides a comprehension of the field-effect at the electrical contacts to 2D materials,which is fundamental to the design,simulation,and fabrication of electronics based on 2D materials. | Yao Guo Yan Sun Alvin Tang Ching-Hua Wang Yanqing Zhao Mengmeng Bai Shuting Xu Zheqi Xu Tao Tang Sheng Wang Chenguang Qiu Kang Xu Xubiao Peng Junfeng Han Eric Pop Yang Chai | 2021 | Nano Research2021，14，12： | 0 |
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