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12篇 您的检索式：作者名="Derluyn"

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		题名	作者	年代	出处	被引量
	1	Mechanism for ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors显示文摘	Van Daele B Van Tendeloo G Derluyn J		0，，20：	1
	2	Low on-resistance high-breakdown normally off A1N/GaN/ A1GaN DHFET on Si substrate 显示文摘	MEDJDOUB F DERLUYN J CHENG K	2010	IEEE Electron De- vice Letter2010，31，2：	1
	3	Low on-resistance high-breakdown normally off A1N/GaN/ AIGaN DHFET on Si substrate 显示文摘	MEDJDOUB F DERLUYN J CHENG K	2010	IEEE Electron Device Letters2010，31，2：	1
	4	A1GaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3Na 显示文摘	Cheng Kai Leys M Derluyn J	2007	J Cryst Growth2007，298，：	1
	5	Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer 显示文摘	DERLUYN J BOEYKENS S CHENG K	2005	J Appl Phys2005，98，：	1
	6	Improvement of AlGaN/GaN high electron mobility transistor structures by insitu deposition of aSi3N4 surface layer 显示文摘	Derluyn J Boeykens S Cheng K	2005	J Appl Plays2005，98，：	1
	7	Mechanism for Ohmic contact formation on Si3N4 passivated A1GaN/GaN high-electron-mobility transistors 显示文摘	B Van Dade G Van Tendeloo J Derluyn	2006	Applied Physics Letters2006，89，20：	1
	8	Deformation and damage due to drying-induced salt crystallization in porous limestone显示文摘	Derluyn H Moonen P Carmeliet J	2014	Journal of the Mechanics and Physics of Solids2014，63，：	1
	9	Control of Nitrogen Incorporation in Ga(In)Nas Grown by Metalorganic Vapor Phase Epitaxy 显示文摘	Derluyn J	2003	J Appi Phys2003，94，4：	1
	10	Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers显示文摘	Kai Cheng M. Leys S. Degroote B. Daele S. Boeykens J. Derluyn M. Germain G. Tendeloo J. Engelen G. Borghs	2006	Journal of Electronic Materials2006，，4：	1
	11	Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer显示文摘	Derluyn J Boeykens S Cheng K	2005	J Appl Phys2005，98，：	1
	12	Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer显示文摘	J Derluyn S Boeykens K Cheng	2005	Journal of Applied Physics2005，98，5：	1

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