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15篇 您的检索式：作者名="D Edwall"

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		题名	作者	年代	出处	被引量
	1	LWIR HgCdTe on Si detector performance and analysis 显示文摘	M Carmody J G Pasko D Edwall	2006	Journal of Electronic Materials2006，35，6：	1
	2	Induction of insulin-like growth factor I messenger ribonucleic acid during regeneration of rat skeletal muscle显示文摘	Edwall D Schalling M Jennische E	1989	Endocrinol1989，124，：	1
	3	MBE growth and characterization of in situ arsenic doled HgCdTe显示文摘	ZANDIAN M EDWALL D D	1998	J E Materials1998，27，6：	1
	4	Precise arsenic doping of Hg Cd Te by MBE and effects on compositional interdiffusion显示文摘	Piquette E C Edwall D D Lee D L	2006	Journal of electrical materials2006，35，6：	1
	5	Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 显示文摘	M Carmody J G Pasko D Edwall	2005	Journal of Electronic Materials2005，34，6：	1
	6	Control of very-long- wavelength infrared HgCdTe detector-cutoff wavelength 显示文摘	Phillips J D Edwall D D Lee D L	2002	Journal of Electronic Materials2002，31，7：	1
	7	Variable Temperature Hall Effect on p-Hg1-xCdxTe Grown on CdTe and Sapphire Substrates by Liquid Phase Epitaxy 显示文摘	Edwall D D Gertner E R Tennant W	1985	Journal of Electronic Materials1985，14，3：	1
	8	Mode of arsenic incorporation in HgCdTe grown by MBE显示文摘	SIVANANTHAN S WIJEWARNAURIYA P S AWARIDEN F VYDYANATH H R ZANDIAN M EDWALL D D ARIAS J M	1997	J Electron Mater1997，26，：	1
	9	Arsenic doping in metalorganic chemical vapor deposition Hg1-xCdxTe using tertiarybutylarsine and diethylarsine显示文摘	EDWALL B D CHEN J S BUBULAC L O	1991	J Vac Sci Tochnol B1991，9，：	1
	10	Long wavelength infrared, molecular beam epitaxy, HgCdTe- on-Si diode performance 显示文摘	CARMODY M PASKO J EDWALL D	2004	Journal of Electronic Materials2004，33，6：	1
	11	p-type arsenic doping of Hg1-xCdxTe by molecular beam epitaxy显示文摘	ZANDIAN M CHEN A C EDWALL D D PASKO J G ARIAS J M	1997	Appl Phys Lett1997，71，：	1
	12	Long Wave- length Infrared, Molecular Beam Epitaxy, HgCdTe- on-Si Diode Performance 显示文摘	Carmody M Pasko J G Edwall D	2004	Electron Mater2004，33，6：	1
	13	Measurement of Minority Carrier Lifetime in n-type MBE HgCdTe and Its Dependence on Annealing 显示文摘	Edwall D D DeWames R E McLevige W V	1998	Journal of Electronic Materials1998，27，6：	1
	14	Control of Very - Long - Wavelength Infrared HgCdTe Detector-Cutoff Wavelength 显示文摘	Phillips J D Edwall D D Lee D L	2002	Journal of Electronic Materials2002，31，7：	1
	15	MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations 显示文摘	E C Piquette M Zandian D D Edwall	2001	Journal of Electronic Materials2001，30，6：	1

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