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24篇 您的检索式：作者名="D Josell"

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	题名	作者	年代	出处	被引量
1	Interfacial Free Energies form Substrate Curvature Measurements of the Creep of Muhilayer Thin Films 显示文摘	D Josell	1994	Acta Metall Mater1994，42，3：	1
2	Electrodeposition of Cu in the PEI-PEG-CI-SPS additive system显示文摘	Josell D Moffat T P	2006	Journal of the Electrochemical Society2006，153，9：	1
3	Hillock and whisker growth on Sn and SnCu electrodeposition a substrate not forming interfacial intermetallic compounds显示文摘	WILLIAMS M E MOON K W BOETTINGER W J JOSELL D DEAL A D	2007	Journal of Electronic Materials2007，36，7：	1
4	Fetal aluminum accumulation ( to the editor) 显示文摘	Maris G Josel D	1998	Teratology1998，58，：	1
5	Electrodeposition of Cu in the PEI-PEG-CI-SPS additive system 显示文摘	Kim S K Josell D Moffat T P	2006	Journal of the Electrochemical Society2006，153，9：	1
6	Measuring the interface stress Silver/nickel interfaces 显示文摘	JOSELL D BONEVICH J E SHAO I	1999	Journal of Material Research1999，14，11：	1
7	Osmium Barriers for Direct Copper Electrodeposition in Damascene Processing 显示文摘	Josell D Witt C Moffat T P	2006	Electrochemical and Solid-State Letters2006，9，2：	1
8	Measuring the interface stress: silver/nickel interfaces 显示文摘	JOSELL D BWYGENHOVEN J E SHAO I	1999	Journal of Material Research1999，14，：	1
9	Determination of the Interfacial Tension by Zero Creep Experiments on Multilayers -Ⅰ Theory显示文摘	Josell D Spaepen F	1993	Acta Metall Mater1993，41，10：	1
10	Determination of the Interfacial Tension by Zero Creep Experiments on Multilayers -Ⅱ Experiment显示文摘	Josell D Spaepen F	1993	Acta Metall Mater1993，41，10：	1
11	Interfacial Free Energies from Substrate CurvatureMeasurements of the Creep of Multilayer Thin Films显示文摘	Josell D	1994	Acta Metall Mater1994，42，3：	1
12	Evaluating the Zero Creep Conditions for Thin Film and Multilayer Thin FilmSpecimens显示文摘	Josell D Coriell S R McFadden G B	1995	Acta Metall Mater1995，43，5：	1
13	Stability in thin film multilayers and microlaminates: the role of free energy, structure, andorientation at interfaces and grain boundaries显示文摘	Lewis A C Josell D	2003	ScriptaMaterialia2003，48，：	1
14	Iridium barriersfor direct copper electrodeposition in damascene processing显示文摘	Josell D Bonevich J E Moffat T P	2006	Electrochemical and Solid-State Letters2006，9，2：	1
15	Osmium barriers for directcopper electrodeposition in damascene processing显示文摘	Josell D Witt C Moffat T P	2006	Elec-trochemical and Solid-State Letters2006，9，2：	1
16	Iridium barriers for direct copper electrodeposition in damascene processing 显示文摘	JOSELL D BONEVICH J E MOFFAT T P	2006	Electrochem Solid-State Lett2006，9，2：	1
17	Osmium barriers for direct copper eleetrodeposition in damascene processing 显示文摘	JOSELL D WITT C MOFFAT T P	2006	Electrochemical and Solid-State Letters2006，9，2：	1
18	Osmium barriers for direct copper electrodeposition in damascene processing 显示文摘	JOSELL D BONEVICH J E MOFFAT T P	2006	Electrochemical and Solid State Lett2006，9，2：	1
19	Iridium barriers for direct copper electrodeposition in damascene processing 显示文摘	JOSELL D BONEVICH J E MOFFAT T P	2006	Electrochemical and Solid State Lett2006，9，2：	1
20	A new method for tensile testing of thin films 显示文摘	Ruud J A Josell D Spaepen F	1993	Journal of Materials Research1993，8，1：	1

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