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3篇 您的检索式:作者名="Chan Hung Shek"
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1Single photon sources with single semiconductor quantum dots显示文摘在这贡献,我们简短记起量光学的基本概念和对有单个 QD 的单个光子的产生的物理的理解必要的半导体量点(QD ) 的性质。第一,我们象 QD 的光性质一样探讨量发射极洞系统,荧光和半导体 QD,和光子统计的光性质的理论。我们然后在以强壮的联合政体,效率, directionality,和极化完成他们的全面光性质和表演的限制光 microcavity 系统控制的量考察单个半导体 QD 的本地化。而且,我们将在单个光子来源的制造上讨论最近的进步,并且为嵌入的各种各样的途径挑选 QD 进 microcavities 或 photonic 水晶 nanocavities 并且显示出怎么扩大波长范围。我们特别地集中于在提高的温度操作导致高重复率,强壮的联合政体,和高收集效率的电子上驾驶的 QD 单个光子来源的新一代。而且,在强壮的联合政体的房间温度单身者光子排放的新开发被考察。为实际单个光子的来源的难区分的光子和留下的挑战的产生也被讨论。Guang-Cun Shant Zhang-Qi Yin Chan Hung Shek Wei Huang 2014Frontiers of physics2014,9,2:9
2Heterogeneous Structure Design to Strengthen Carbon-Containing CoCrFeNi High Entropy Alloy显示文摘A carbon-containing CoCrFeNi high entropy alloy(HEA)with heterogeneous structures was obtained through thermomechanical treatments,which induced concurrent recrystallization and carbide precipitation in the alloy.A combination of high yield strength(556 MPa)and large uniform elongation(45%)was achieved in the investigated alloy.The enhancement of the strength is attributed to the combined effects of grain refinement,precipitation strengthening and microstructural heterogeneity.Our work demonstrated that the heterogeneity design could be realized by thermomechanical processes,which provided a practical strategy for producing HEAs with high performance.Xiaomeng Qin Chan Hung Shek 2021Acta Metallurgica Sinica(English Letters)2021,34,11:0
3The innate interfacial elastic strain field of a transformable B2 precipitate embedded in an amorphous matrix显示文摘When a transformable B2 precipitate is embedded in an amorphous matrix,it is often experimentally observed that the crystalline-amorphous interface not only serves as an initiation site for the martensitic transformation due to local stress concentrations,but also as an inhibitor to stabilize the transformation,the latter being attributed to the“confinement effect”exerted by the amorphous matrix,according to the Eshelby solution.These two seemingly incongruous factors are examined in this study using molecular dynamics simulations from an atomic interaction perspective.An innate strain gradient in the vicinity of the crystalline-amorphous interface is identified.The actual interface,the compressive/dilatative transition,and the interfacial maximum strain are investigated to differentiate from the conventional“interface”located within a distance of a few nanometers.Our innate interfacial elastic strain field model is applicable for the design of materials with a higher degree of martensitic transformation and controllable stress concentration,even in cryogenic environments.Xiaoling Fu Yujun Lin Mixun Zhu Kai Wang Jiaqing Wu Xing Tong Wenli Song Ming Jen Tan Yuanzheng Yang Jun Shen Gang Wang Chan Hung Shek Robert O.Ritchie 2023npj Computational Materials2023,,1:0
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