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20篇 您的检索式：作者名="Chabal Y"

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	题名	作者	年代	出处	被引量
1	Hydrogen passivation of germanium surface using wet chemicaI preparation显示文摘	Rivillon S Chabal Y J Amy F	2005	Applied Physics Letters2005，87，25：	1
2	Intermixing at the tantalum oxide/silicon interface in gate dielectric structures显示文摘	Alers G B Werder D J Chabal Y	1998	Appl Phys Lett1998，73，11：	1
3	Precursor design and reaction mechanisms for the atomic layer deposition of metal films 显示文摘	RAMOS K B SALY M J CHABAL Y J	2013	Coordin Chem Rev2013，257，2324：	1
4	Chemomechanical polishing of silicon: surface termination and mechanism of removal显示文摘	Pietsch G J Higashi G S Chabal Y J	1994	Appl Phys Lett1994，64，23：	1
5	Intermixing at the tantalum oxide/silicon interface in gate dielectric structures 显示文摘	ALERS G B WERDERK D J CHABAL Y	1998	Applied Physics Letters1998，73，11：	1
6	Hydrogen passivation of germanium(100) surface using wet chemical preparation 显示文摘	Rivillon S Chabal Y J Amy F	2005	Appl Phy Lett2005，87，：	1
7	The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111) 显示文摘	Pietsch G J Chabal Y J Higashi G S	1995	Surface Science1995，331，333：	1
8	查看详情显示文摘	G B Alers D J Werder Y Chabal		0，，：	1
9	Ideal hydrogen termination of the Si (111) surface显示文摘	Higashi G S Chabal Y J Trucks G W	1990	Applied Physics Letters(S0003-6951)1990，56，7：	1
10	Intermixing at the tantalum oxide/silicon interface in gate dielectric structures 显示文摘	Werder D J Chabal Y	1998	Optics Letters1998，73，：	1
11	Hydrogen passivation of germanium (100) surface using wet chemical preparation 显示文摘	RIVILLDNS CHABAL Y J AMY F	2005	APL2005，87，4：	1
12	Hydrogen Vibration on Si(111)7 ×7:Evidence for a unique chemisorption site显示文摘	Chabal Y J	1983	Phys Rev Lett1983，50，23：	1
13	Coupling of an adsorbate vibration to a substrate surface phonon:H on Si(111)显示文摘	Dumas P Chabal Y J Higashi G S	1990	Phys Rev Lett1990，65，9：	1
14	Surface infrared spectroscopy显示文摘	CHABAL Y J	1988	Surface Science Reports1988，8，57：	1
15	Materials characterization of alternative gate dielectrics 显示文摘	Busch B W Pluchery O Chabal Y J	2002	MRS Bulletin2002，27，：	1
16	Chemomechanical polishing of silicon:surface termination and mechanism of removal显示文摘	PIETSCH G J HIGASHI G S CHABAL Y J	1994	ApplPhys Lett1994，64，23：	1
17	Ideal hydrogen termination of the Si ( 111 ) surface 显示文摘	Higashi G S Chabal Y J Tracks G W	1990	Appl Phys Lett1990，56，：	1
18	Genipin-induced changes in collagen gels: correlation of mechanical properties to fluorescence 显示文摘	Sundararaghavan HG Monteiro GA Lapin NA Chabal Y J Mik- san JR Shreiber DI	2008	J Bi- omed Mater Res A2008，87，2：	1
19	Ideal hydrogen termination of the Si-(111) surface 显示文摘	HIGASHI G S CHABAL Y J TRUCKS G W RAGHAVACHAR K	1990	Appl Phys Lett1990，56，7：	1
20	Attachment of 3-(aminopropyl)triethoxysilane on silicon oxide surfaces: dependence on solution temperature显示文摘	Pasternack R M Amy S R Chabal Y J	2008	Langmuir2008，24，12：	1

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